TY - JOUR

T1 - Effect of B4C barrier layer on layer intermixing in nanoscale W/Be multilayers before and after annealing

AU - Sakhonenkov, Sergei S.

AU - Filatova, Elena O.

N1 - Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/12/30

Y1 - 2022/12/30

N2 - The effect of an ultrathin B 4C barrier layer on the content of beryllides formed as a result of W and Be mixing during deposition in a short-period W/Be multilayers, and, as a consequence, on the reflectivity of the multilayers and their thermal stability is discussed in the paper. All the multilayers were prepared by means of DC magnetron sputtering. Chemical composition analysis and evaluation of thickness extensions were carried out utilizing X-ray photoelectron spectroscopy and transmission electron microscopy, respectively. The results obtained showed that the insertion of the ultrathin B 4C barrier layer led to a decrease in the content of beryllides in multilayers due to the formation of tungsten compounds with boron/carbon. In the case of the B 4C deposited onto the beryllium layer it was also associated with the additional formation of Be 2C. It was suggested that the formation of the borides and carbides is more optically favorable compared to the beryllides in the multilayer without the barrier layer, which causes an increase in reflectivity. Ex situ annealing of the multilayer structures at temperatures up to 300 °C did not provoke additional mixing of the layers, but only increased a surface BeO, which led to decreasing in reflectivity of the multilayers.

AB - The effect of an ultrathin B 4C barrier layer on the content of beryllides formed as a result of W and Be mixing during deposition in a short-period W/Be multilayers, and, as a consequence, on the reflectivity of the multilayers and their thermal stability is discussed in the paper. All the multilayers were prepared by means of DC magnetron sputtering. Chemical composition analysis and evaluation of thickness extensions were carried out utilizing X-ray photoelectron spectroscopy and transmission electron microscopy, respectively. The results obtained showed that the insertion of the ultrathin B 4C barrier layer led to a decrease in the content of beryllides in multilayers due to the formation of tungsten compounds with boron/carbon. In the case of the B 4C deposited onto the beryllium layer it was also associated with the additional formation of Be 2C. It was suggested that the formation of the borides and carbides is more optically favorable compared to the beryllides in the multilayer without the barrier layer, which causes an increase in reflectivity. Ex situ annealing of the multilayer structures at temperatures up to 300 °C did not provoke additional mixing of the layers, but only increased a surface BeO, which led to decreasing in reflectivity of the multilayers.

KW - Annealing

KW - Beryllides

KW - Chemical interaction

KW - Layer mixing

KW - Multilayers

KW - W/Be

UR - https://www.mendeley.com/catalogue/10f03fb3-a0a8-3089-bede-36561de098e5/

UR - http://www.scopus.com/inward/record.url?scp=85144055856&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2022.154961

DO - 10.1016/j.apsusc.2022.154961

M3 - Article

VL - 606

SP - 154961

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

M1 - 154961

ER -