Dynamics of carrier recombination in a semiconductor laser structure

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Dynamics of carrier recombination in a semiconductor laser structure. / Dzhioev, R.I.; Kavokin, K.V.; Kusrayev, Y.G.; Poletaev, N.K.

In: Semiconductors, No. 11, 2015, p. 1531-1535.

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Dzhioev, R.I. ; Kavokin, K.V. ; Kusrayev, Y.G. ; Poletaev, N.K. / Dynamics of carrier recombination in a semiconductor laser structure. In: Semiconductors. 2015 ; No. 11. pp. 1531-1535.

BibTeX

@article{bf643ede80e0403eb34490b5fca3a99f,

title = "Dynamics of carrier recombination in a semiconductor laser structure",

abstract = "{\textcopyright} 2015, Pleiades Publishing, Ltd.Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to saturation of the nonradiative-recombination channel. The time of electron capture at recombination centers is determined to be τe = 5 × 10–9 s. The temperature of nonequilibrium electrons heated by a He–Ne laser is estimated.",

author = "R.I. Dzhioev and K.V. Kavokin and Y.G. Kusrayev and N.K. Poletaev",

year = "2015",

doi = "10.1134/S1063782615110056",

language = "English",

pages = "1531--1535",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "11",

}

RIS

TY - JOUR

T1 - Dynamics of carrier recombination in a semiconductor laser structure

AU - Dzhioev, R.I.

AU - Kavokin, K.V.

AU - Kusrayev, Y.G.

AU - Poletaev, N.K.

PY - 2015

Y1 - 2015

N2 - © 2015, Pleiades Publishing, Ltd.Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to saturation of the nonradiative-recombination channel. The time of electron capture at recombination centers is determined to be τe = 5 × 10–9 s. The temperature of nonequilibrium electrons heated by a He–Ne laser is estimated.

AB - © 2015, Pleiades Publishing, Ltd.Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to saturation of the nonradiative-recombination channel. The time of electron capture at recombination centers is determined to be τe = 5 × 10–9 s. The temperature of nonequilibrium electrons heated by a He–Ne laser is estimated.

U2 - 10.1134/S1063782615110056

DO - 10.1134/S1063782615110056

M3 - Article

SP - 1531

EP - 1535

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 4003978