Droplet contact angle controlling the morphology and crystal phase of GaAs and GaP nanowires

DOI

https://doi.org/10.1109/iclo54117.2022.9840250
Final published version

V. G. Dubrovskii
N. V. Sibirev
V. V. Fedorov
L. N. Dvoretckaia
D. A. Kirilenko
I. S. Mukhin
A. Ghukasyan
N. I. Goktas
R. R. Lapierre

We discuss the droplet contact angle as the key parameter influencing the morphology and the related crystal phase of vapor-liquid-solid III-V nanowires. In particular, we show that twinning superlattice Te-doped GaAs nanowires are formed only when the droplet contact angle is above 130°, and that pure wurtzite sections in self-catalyzed GaP nanowires are obtained in the stage of Ga droplet consumption when the contact angle is within the range from 95° to 105°.

Original language	English
Title of host publication	2022 International Conference Laser Optics, ICLO 2022 - Proceedingss
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665466646
ISBN (Print)	9781665466646
DOIs	https://doi.org/10.1109/iclo54117.2022.9840250
State	Published - 20 Jun 2022
Event	2022 International Conference Laser Optics, ICLO 2022 - St. Petersburg, Russia, St. Petersburg, Russian Federation Duration: 20 Jun 2022 → 24 Jun 2022 Conference number: 20

Publication series

Name	2022 International Conference Laser Optics, ICLO 2022 - Proceedingss

Conference

Conference	2022 International Conference Laser Optics, ICLO 2022
Abbreviated title	ICLO 2022
Country/Territory	Russian Federation
City	St. Petersburg
Period	20/06/22 → 24/06/22

Research areas

crystal phase, droplet contact angle, twinning superlattice

Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

ID: 100346501