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Direct observation of the electron spin relaxation induced by nuclei in quantum dots. / Braun, P. F.; Lombez, L.; Marie, X.; Urbaszek, B.; Amand, T.; Renucci, P.; Lagarde, D.; Kalevich, V. K.; Kavokin, K. V.; Krebs, O.; Voisin, P.

Ultrafast Phenomena in Semiconductors and Nanostructure Materials X. Vol. 6118 2006. 61180Q.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Braun, PF, Lombez, L, Marie, X, Urbaszek, B, Amand, T, Renucci, P, Lagarde, D, Kalevich, VK, Kavokin, KV, Krebs, O & Voisin, P 2006, Direct observation of the electron spin relaxation induced by nuclei in quantum dots. in Ultrafast Phenomena in Semiconductors and Nanostructure Materials X. vol. 6118, 61180Q, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, San Jose, CA, United States, 23/01/06. https://doi.org/10.1117/12.641399

APA

Braun, P. F., Lombez, L., Marie, X., Urbaszek, B., Amand, T., Renucci, P., Lagarde, D., Kalevich, V. K., Kavokin, K. V., Krebs, O., & Voisin, P. (2006). Direct observation of the electron spin relaxation induced by nuclei in quantum dots. In Ultrafast Phenomena in Semiconductors and Nanostructure Materials X (Vol. 6118). [61180Q] https://doi.org/10.1117/12.641399

Vancouver

Braun PF, Lombez L, Marie X, Urbaszek B, Amand T, Renucci P et al. Direct observation of the electron spin relaxation induced by nuclei in quantum dots. In Ultrafast Phenomena in Semiconductors and Nanostructure Materials X. Vol. 6118. 2006. 61180Q https://doi.org/10.1117/12.641399

Author

Braun, P. F. ; Lombez, L. ; Marie, X. ; Urbaszek, B. ; Amand, T. ; Renucci, P. ; Lagarde, D. ; Kalevich, V. K. ; Kavokin, K. V. ; Krebs, O. ; Voisin, P. / Direct observation of the electron spin relaxation induced by nuclei in quantum dots. Ultrafast Phenomena in Semiconductors and Nanostructure Materials X. Vol. 6118 2006.

BibTeX

@inproceedings{e924aa56596e4465befc3c594486713c,
title = "Direct observation of the electron spin relaxation induced by nuclei in quantum dots",
abstract = "We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantum dots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation down to 1/3 of its initial value with a characteristic time of TΔ ≈ 500ps. We attribute this decay to the hyperfine interaction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies reveal that this efficient spin relaxation mechanism can be suppressed by a field in the order of 100mT. In pump-probe like experiments we demonstrate that the resident hole spin, {"}written{"}2nd with a first pulse, remains stable long enough to be {"}read{"} 15ns later with a second pulse.",
keywords = "Nanostructures, Quantum dots, Spin electronics, Time-resolved optical spectroscopy",
author = "Braun, {P. F.} and L. Lombez and X. Marie and B. Urbaszek and T. Amand and P. Renucci and D. Lagarde and Kalevich, {V. K.} and Kavokin, {K. V.} and O. Krebs and P. Voisin",
year = "2006",
month = may,
day = "23",
doi = "10.1117/12.641399",
language = "English",
isbn = "0819461601",
volume = "6118",
booktitle = "Ultrafast Phenomena in Semiconductors and Nanostructure Materials X",
note = "Ultrafast Phenomena in Semiconductors and Nanostructure Materials X ; Conference date: 23-01-2006 Through 25-01-2006",

}

RIS

TY - GEN

T1 - Direct observation of the electron spin relaxation induced by nuclei in quantum dots

AU - Braun, P. F.

AU - Lombez, L.

AU - Marie, X.

AU - Urbaszek, B.

AU - Amand, T.

AU - Renucci, P.

AU - Lagarde, D.

AU - Kalevich, V. K.

AU - Kavokin, K. V.

AU - Krebs, O.

AU - Voisin, P.

PY - 2006/5/23

Y1 - 2006/5/23

N2 - We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantum dots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation down to 1/3 of its initial value with a characteristic time of TΔ ≈ 500ps. We attribute this decay to the hyperfine interaction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies reveal that this efficient spin relaxation mechanism can be suppressed by a field in the order of 100mT. In pump-probe like experiments we demonstrate that the resident hole spin, "written"2nd with a first pulse, remains stable long enough to be "read" 15ns later with a second pulse.

AB - We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantum dots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation down to 1/3 of its initial value with a characteristic time of TΔ ≈ 500ps. We attribute this decay to the hyperfine interaction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies reveal that this efficient spin relaxation mechanism can be suppressed by a field in the order of 100mT. In pump-probe like experiments we demonstrate that the resident hole spin, "written"2nd with a first pulse, remains stable long enough to be "read" 15ns later with a second pulse.

KW - Nanostructures

KW - Quantum dots

KW - Spin electronics

KW - Time-resolved optical spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=33646686180&partnerID=8YFLogxK

U2 - 10.1117/12.641399

DO - 10.1117/12.641399

M3 - Conference contribution

AN - SCOPUS:33646686180

SN - 0819461601

SN - 9780819461605

VL - 6118

BT - Ultrafast Phenomena in Semiconductors and Nanostructure Materials X

T2 - Ultrafast Phenomena in Semiconductors and Nanostructure Materials X

Y2 - 23 January 2006 through 25 January 2006

ER -

ID: 39446747