TY - JOUR

T1 - Dirac cone manipulation via bismuth and oxygen intercalation underneath graphene on Re(0001)

AU - Gogina, A.A.

AU - Klimovskikh, I.I.

AU - Estyunin, D.A.

AU - Filnov, S.O.

AU - Shikin, A.M.

N1 - Publisher Copyright: © 2021 Author(s).

PY - 2021/6/22

Y1 - 2021/6/22

N2 - This paper reports on an investigation by angle-resolved photoelectron spectroscopy of the graphene on Re(0001) substrate, after intercalation by bismuth atoms. Our results demonstrate that intercalation of Bi atoms restores the quasi-free-standingproperties of graphene. Thus, the band structure of this system is characterized by a linear π-state dispersion near the K point of theBrillouin zone. The Dirac point shifts toward higher binding energies by approximately 0.4 eV, which is caused by charge transferfrom Bi atoms to graphene. Besides we observed a band gap with a width of at least 0.4 eV. The possible reasons of the band gapin the system Gr/Bi/Re(0001) can be caused by hybridization of π-states of graphene with 5d-rhenium states and/or bismuth statesor symmetry breaking of the sublattices of graphene. Moreover, the Dirac point position is found to be different depending on theintercalated atoms. Intercalation of the oxygen atoms underneath graphene after exposure to the air results in the appearance of thesecond π-state branch in the electronic structure. There are two Dirac cones in the ARPES image and for the first one the chargetransfer from the Bi atoms leads to the Dirac point position below the Fermi level, i.e. to the n-doping of graphene. For the secondone the Dirac point is located above the Fermi level resulting in p-doping that is caused by charge transfer between oxygen andgraphene atoms.

AB - This paper reports on an investigation by angle-resolved photoelectron spectroscopy of the graphene on Re(0001) substrate, after intercalation by bismuth atoms. Our results demonstrate that intercalation of Bi atoms restores the quasi-free-standingproperties of graphene. Thus, the band structure of this system is characterized by a linear π-state dispersion near the K point of theBrillouin zone. The Dirac point shifts toward higher binding energies by approximately 0.4 eV, which is caused by charge transferfrom Bi atoms to graphene. Besides we observed a band gap with a width of at least 0.4 eV. The possible reasons of the band gapin the system Gr/Bi/Re(0001) can be caused by hybridization of π-states of graphene with 5d-rhenium states and/or bismuth statesor symmetry breaking of the sublattices of graphene. Moreover, the Dirac point position is found to be different depending on theintercalated atoms. Intercalation of the oxygen atoms underneath graphene after exposure to the air results in the appearance of thesecond π-state branch in the electronic structure. There are two Dirac cones in the ARPES image and for the first one the chargetransfer from the Bi atoms leads to the Dirac point position below the Fermi level, i.e. to the n-doping of graphene. For the secondone the Dirac point is located above the Fermi level resulting in p-doping that is caused by charge transfer between oxygen andgraphene atoms.

UR - https://aip.scitation.org/doi/10.1063/5.0056673

UR - http://www.scopus.com/inward/record.url?scp=85109387421&partnerID=8YFLogxK

U2 - 10.1063/5.0056673

DO - 10.1063/5.0056673

M3 - Article

VL - 2359

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

SN - 0094-243X

IS - 1

M1 - 02008

Y2 - 30 September 2019 through 4 October 2019

ER -