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Differential Capacitance of a Semiconductor Film. / Tsurikov, D. E.; Yafyasov, A. M.

In: Semiconductors, Vol. 44, No. 10, 2010, p. 1292-1296.

Research output: Contribution to journal › Article

Harvard

Tsurikov, DE & Yafyasov, AM 2010, 'Differential Capacitance of a Semiconductor Film', Semiconductors, vol. 44, no. 10, pp. 1292-1296. https://doi.org/10.1134/S106378261010009X

APA

Tsurikov, D. E., & Yafyasov, A. M. (2010). Differential Capacitance of a Semiconductor Film. Semiconductors, 44(10), 1292-1296. https://doi.org/10.1134/S106378261010009X

Vancouver

Tsurikov DE, Yafyasov AM. Differential Capacitance of a Semiconductor Film. Semiconductors. 2010;44(10):1292-1296. https://doi.org/10.1134/S106378261010009X

Author

Tsurikov, D. E. ; Yafyasov, A. M. / Differential Capacitance of a Semiconductor Film. In: Semiconductors. 2010 ; Vol. 44, No. 10. pp. 1292-1296.

BibTeX

@article{bc13d5b847f748ccab19b2efbba458f1,
title = "Differential Capacitance of a Semiconductor Film",
abstract = "A fast scheme for calculating the surface differential capacitance of a semiconductor film with an ohmic contact on the back side is proposed within the phenomenological theory of the space-charge region. The calculation method is considered by the example of a semiconductor with a parabolic dispersion relation (n-Ge). A phenomenon of capacitance-voltage characteristic drop with a decrease in the film thickness is revealed, which is not related to the quantum-confinement effects",
author = "Tsurikov, {D. E.} and Yafyasov, {A. M.}",
year = "2010",
doi = "10.1134/S106378261010009X",
language = "English",
volume = "44",
pages = "1292--1296",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "10",

}

RIS

TY - JOUR

T1 - Differential Capacitance of a Semiconductor Film

AU - Tsurikov, D. E.

AU - Yafyasov, A. M.

PY - 2010

Y1 - 2010

N2 - A fast scheme for calculating the surface differential capacitance of a semiconductor film with an ohmic contact on the back side is proposed within the phenomenological theory of the space-charge region. The calculation method is considered by the example of a semiconductor with a parabolic dispersion relation (n-Ge). A phenomenon of capacitance-voltage characteristic drop with a decrease in the film thickness is revealed, which is not related to the quantum-confinement effects

AB - A fast scheme for calculating the surface differential capacitance of a semiconductor film with an ohmic contact on the back side is proposed within the phenomenological theory of the space-charge region. The calculation method is considered by the example of a semiconductor with a parabolic dispersion relation (n-Ge). A phenomenon of capacitance-voltage characteristic drop with a decrease in the film thickness is revealed, which is not related to the quantum-confinement effects

U2 - 10.1134/S106378261010009X

DO - 10.1134/S106378261010009X

M3 - Article

VL - 44

SP - 1292

EP - 1296

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 10

ER -

ID: 5360203