Standard

Crystal polarity discrimination in GaN nanowires on graphene. / Pavlov, Alexander; Mozharov, Alexey; Berdnikov, Yury; Barbier, Camille; Harmand, Jean Christophe; Tchernycheva, Maria; Polozkov, Roman; Mukhin, Ivan.

In: Journal of Materials Chemistry C, Vol. 9, No. 31, 21.08.2021, p. 9997-10004.

Research output: Contribution to journal › Article › peer-review

Harvard

Pavlov, A, Mozharov, A, Berdnikov, Y, Barbier, C, Harmand, JC, Tchernycheva, M, Polozkov, R & Mukhin, I 2021, 'Crystal polarity discrimination in GaN nanowires on graphene', Journal of Materials Chemistry C, vol. 9, no. 31, pp. 9997-10004. https://doi.org/10.1039/d1tc02710g

APA

Pavlov, A., Mozharov, A., Berdnikov, Y., Barbier, C., Harmand, J. C., Tchernycheva, M., Polozkov, R., & Mukhin, I. (2021). Crystal polarity discrimination in GaN nanowires on graphene. Journal of Materials Chemistry C, 9(31), 9997-10004. https://doi.org/10.1039/d1tc02710g

Vancouver

Pavlov A, Mozharov A, Berdnikov Y, Barbier C, Harmand JC, Tchernycheva M et al. Crystal polarity discrimination in GaN nanowires on graphene. Journal of Materials Chemistry C. 2021 Aug 21;9(31):9997-10004. https://doi.org/10.1039/d1tc02710g

Author

Pavlov, Alexander ; Mozharov, Alexey ; Berdnikov, Yury ; Barbier, Camille ; Harmand, Jean Christophe ; Tchernycheva, Maria ; Polozkov, Roman ; Mukhin, Ivan. / Crystal polarity discrimination in GaN nanowires on graphene. In: Journal of Materials Chemistry C. 2021 ; Vol. 9, No. 31. pp. 9997-10004.

BibTeX

@article{654062f9a8384517a22d2eee946b302f,
title = "Crystal polarity discrimination in GaN nanowires on graphene",
abstract = "We present experimental data and computational analysis of the formation of GaN nanowires on graphene virtual substrates. We show that GaN nanowires on graphene exhibit nitrogen polarity. We employ the DFT-based computational analysis to demonstrate that among different possible configurations of Ga and N atoms only the N-polar one is stable. We suggest that polarity discrimination occurs due to the dipole interaction between the GaN nanocrystal and π-orbitals of the graphene sheet.",
keywords = "SELECTIVE-AREA GROWTH, SI, GAAS, NANOSTRUCTURES, NUCLEATION, GRAPHITE, EPITAXY, SILICON, SI(111), ARRAYS",
author = "Alexander Pavlov and Alexey Mozharov and Yury Berdnikov and Camille Barbier and Harmand, {Jean Christophe} and Maria Tchernycheva and Roman Polozkov and Ivan Mukhin",
note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",
year = "2021",
month = aug,
day = "21",
doi = "10.1039/d1tc02710g",
language = "English",
volume = "9",
pages = "9997--10004",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry",
number = "31",

}

RIS

TY - JOUR

T1 - Crystal polarity discrimination in GaN nanowires on graphene

AU - Pavlov, Alexander

AU - Mozharov, Alexey

AU - Berdnikov, Yury

AU - Barbier, Camille

AU - Harmand, Jean Christophe

AU - Tchernycheva, Maria

AU - Polozkov, Roman

AU - Mukhin, Ivan

N1 - Publisher Copyright: © The Royal Society of Chemistry.

PY - 2021/8/21

Y1 - 2021/8/21

N2 - We present experimental data and computational analysis of the formation of GaN nanowires on graphene virtual substrates. We show that GaN nanowires on graphene exhibit nitrogen polarity. We employ the DFT-based computational analysis to demonstrate that among different possible configurations of Ga and N atoms only the N-polar one is stable. We suggest that polarity discrimination occurs due to the dipole interaction between the GaN nanocrystal and π-orbitals of the graphene sheet.

AB - We present experimental data and computational analysis of the formation of GaN nanowires on graphene virtual substrates. We show that GaN nanowires on graphene exhibit nitrogen polarity. We employ the DFT-based computational analysis to demonstrate that among different possible configurations of Ga and N atoms only the N-polar one is stable. We suggest that polarity discrimination occurs due to the dipole interaction between the GaN nanocrystal and π-orbitals of the graphene sheet.

KW - SELECTIVE-AREA GROWTH

KW - SI

KW - GAAS

KW - NANOSTRUCTURES

KW - NUCLEATION

KW - GRAPHITE

KW - EPITAXY

KW - SILICON

KW - SI(111)

KW - ARRAYS

UR - http://www.scopus.com/inward/record.url?scp=85113162948&partnerID=8YFLogxK

U2 - 10.1039/d1tc02710g

DO - 10.1039/d1tc02710g

M3 - Article

AN - SCOPUS:85113162948

VL - 9

SP - 9997

EP - 10004

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 31

ER -

ID: 88772360