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Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment. / Vyvenko, O. F.; Krüger, O.; Kittler, M.

In: Applied Physics Letters, Vol. 76, No. 6, 07.02.2000, p. 697-699.

Research output: Contribution to journal › Article › peer-review

Harvard

Vyvenko, OF, Krüger, O & Kittler, M 2000, 'Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment', Applied Physics Letters, vol. 76, no. 6, pp. 697-699. https://doi.org/10.1063/1.125865

APA

Vyvenko, O. F., Krüger, O., & Kittler, M. (2000). Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment. Applied Physics Letters, 76(6), 697-699. https://doi.org/10.1063/1.125865

Vancouver

Vyvenko OF, Krüger O, Kittler M. Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment. Applied Physics Letters. 2000 Feb 7;76(6):697-699. https://doi.org/10.1063/1.125865

Author

Vyvenko, O. F. ; Krüger, O. ; Kittler, M. / Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment. In: Applied Physics Letters. 2000 ; Vol. 76, No. 6. pp. 697-699.

BibTeX

@article{2bd63bab130d49b7b3bf47d0e4db8439,
title = "Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment",
abstract = "Cross-sectional and temperature-dependent measurements of the electron-beam-induced current reveal the depth profile of the recombination activity of grain boundaries and intragrain dislocations in cast multicrystalline Si. After remote hydrogen plasma treatment for 1 h at 310°C, defects are passivated down to a depth of 100 μm. Even the activity of crystal defects exhibiting small or not detectable room temperature contrast is further reduced by hydrogenation. We interpret the experimental data in terms of a recently developed model, which relates the temperature behavior of the recombination activity to the density of (contaminant-induced) deep levels at the defects. {\textcopyright} 2000 American Institute of Physics.",
author = "Vyvenko, {O. F.} and O. Kr{\"u}ger and M. Kittler",
year = "2000",
month = feb,
day = "7",
doi = "10.1063/1.125865",
language = "English",
volume = "76",
pages = "697--699",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "6",

}

RIS

TY - JOUR

T1 - Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment

AU - Vyvenko, O. F.

AU - Krüger, O.

AU - Kittler, M.

PY - 2000/2/7

Y1 - 2000/2/7

N2 - Cross-sectional and temperature-dependent measurements of the electron-beam-induced current reveal the depth profile of the recombination activity of grain boundaries and intragrain dislocations in cast multicrystalline Si. After remote hydrogen plasma treatment for 1 h at 310°C, defects are passivated down to a depth of 100 μm. Even the activity of crystal defects exhibiting small or not detectable room temperature contrast is further reduced by hydrogenation. We interpret the experimental data in terms of a recently developed model, which relates the temperature behavior of the recombination activity to the density of (contaminant-induced) deep levels at the defects. © 2000 American Institute of Physics.

AB - Cross-sectional and temperature-dependent measurements of the electron-beam-induced current reveal the depth profile of the recombination activity of grain boundaries and intragrain dislocations in cast multicrystalline Si. After remote hydrogen plasma treatment for 1 h at 310°C, defects are passivated down to a depth of 100 μm. Even the activity of crystal defects exhibiting small or not detectable room temperature contrast is further reduced by hydrogenation. We interpret the experimental data in terms of a recently developed model, which relates the temperature behavior of the recombination activity to the density of (contaminant-induced) deep levels at the defects. © 2000 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=0000083799&partnerID=8YFLogxK

U2 - 10.1063/1.125865

DO - 10.1063/1.125865

M3 - Article

AN - SCOPUS:0000083799

VL - 76

SP - 697

EP - 699

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -

ID: 87815800