Research output: Contribution to journal › Article › peer-review
Cr-Containing Ferromagnetic Film–Topological Insulator Heterostructures as Promising Materials for the Quantum Anomalous Hall Effect. / Petrov, E. K.; Silkin, I. V.; Menshchikova, T. V.; Chulkov, E. V.
In: JETP Letters, Vol. 109, No. 2, 2019, p. 121-125.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Cr-Containing Ferromagnetic Film–Topological Insulator Heterostructures as Promising Materials for the Quantum Anomalous Hall Effect
AU - Petrov, E. K.
AU - Silkin, I. V.
AU - Menshchikova, T. V.
AU - Chulkov, E. V.
N1 - Petrov, E.K., Silkin, I.V., Menshchikova, T.V. et al. Jetp Lett. (2019) 109: 121. https://doi.org/10.1134/S0021364019020127
PY - 2019
Y1 - 2019
N2 - Two heterostructures consisting of a Bi 2 Se 3 topological insulator substrate and a CrI 3 or CrBi 2 Se 4 ferromagnetic insulator thin film have been theoretically studied. The calculated band structure indicates that both heterostructures exhibit the quantum anomalous Hall effect with the splitting of the topological surface state of 19 and 92 meV for CrI 3 /Bi 2 Se 3 and CrBi 2 Se 4 /Bi 2 Se 3 , respectively. It has been shown that the band gap is determined primarily by the degree of localization of the wavefunction of the topological state in the ferromagnetic film. This degree of localization depends on the height and width of the interface barrier between the substrate and ferromagnetic material. Both the height and width of the interface barrier in the CrBi 2 Se 4 /Bi 2 Se 3 system are similar to the respective characteristics of the van der Waals barrier in bulk Bi 2 Se 3 .
AB - Two heterostructures consisting of a Bi 2 Se 3 topological insulator substrate and a CrI 3 or CrBi 2 Se 4 ferromagnetic insulator thin film have been theoretically studied. The calculated band structure indicates that both heterostructures exhibit the quantum anomalous Hall effect with the splitting of the topological surface state of 19 and 92 meV for CrI 3 /Bi 2 Se 3 and CrBi 2 Se 4 /Bi 2 Se 3 , respectively. It has been shown that the band gap is determined primarily by the degree of localization of the wavefunction of the topological state in the ferromagnetic film. This degree of localization depends on the height and width of the interface barrier between the substrate and ferromagnetic material. Both the height and width of the interface barrier in the CrBi 2 Se 4 /Bi 2 Se 3 system are similar to the respective characteristics of the van der Waals barrier in bulk Bi 2 Se 3 .
UR - http://www.scopus.com/inward/record.url?scp=85064890726&partnerID=8YFLogxK
U2 - 10.1134/S0021364019020127
DO - 10.1134/S0021364019020127
M3 - Article
AN - SCOPUS:85064890726
VL - 109
SP - 121
EP - 125
JO - JETP Letters
JF - JETP Letters
SN - 0021-3640
IS - 2
ER -
ID: 49499361