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Cr-Containing Ferromagnetic Film–Topological Insulator Heterostructures as Promising Materials for the Quantum Anomalous Hall Effect. / Petrov, E. K.; Silkin, I. V.; Menshchikova, T. V.; Chulkov, E. V.

In: JETP Letters, Vol. 109, No. 2, 2019, p. 121-125.

Research output: Contribution to journal › Article › peer-review

Harvard

Petrov, EK, Silkin, IV, Menshchikova, TV & Chulkov, EV 2019, 'Cr-Containing Ferromagnetic Film–Topological Insulator Heterostructures as Promising Materials for the Quantum Anomalous Hall Effect', JETP Letters, vol. 109, no. 2, pp. 121-125. https://doi.org/10.1134/S0021364019020127

APA

Petrov, E. K., Silkin, I. V., Menshchikova, T. V., & Chulkov, E. V. (2019). Cr-Containing Ferromagnetic Film–Topological Insulator Heterostructures as Promising Materials for the Quantum Anomalous Hall Effect. JETP Letters, 109(2), 121-125. https://doi.org/10.1134/S0021364019020127

Vancouver

Petrov EK, Silkin IV, Menshchikova TV, Chulkov EV. Cr-Containing Ferromagnetic Film–Topological Insulator Heterostructures as Promising Materials for the Quantum Anomalous Hall Effect. JETP Letters. 2019;109(2):121-125. https://doi.org/10.1134/S0021364019020127

Author

Petrov, E. K. ; Silkin, I. V. ; Menshchikova, T. V. ; Chulkov, E. V. / Cr-Containing Ferromagnetic Film–Topological Insulator Heterostructures as Promising Materials for the Quantum Anomalous Hall Effect. In: JETP Letters. 2019 ; Vol. 109, No. 2. pp. 121-125.

BibTeX

@article{46c54d02270c495187c4274148b9f056,
title = "Cr-Containing Ferromagnetic Film–Topological Insulator Heterostructures as Promising Materials for the Quantum Anomalous Hall Effect",
abstract = " Two heterostructures consisting of a Bi 2 Se 3 topological insulator substrate and a CrI 3 or CrBi 2 Se 4 ferromagnetic insulator thin film have been theoretically studied. The calculated band structure indicates that both heterostructures exhibit the quantum anomalous Hall effect with the splitting of the topological surface state of 19 and 92 meV for CrI 3 /Bi 2 Se 3 and CrBi 2 Se 4 /Bi 2 Se 3 , respectively. It has been shown that the band gap is determined primarily by the degree of localization of the wavefunction of the topological state in the ferromagnetic film. This degree of localization depends on the height and width of the interface barrier between the substrate and ferromagnetic material. Both the height and width of the interface barrier in the CrBi 2 Se 4 /Bi 2 Se 3 system are similar to the respective characteristics of the van der Waals barrier in bulk Bi 2 Se 3 . ",
author = "Petrov, {E. K.} and Silkin, {I. V.} and Menshchikova, {T. V.} and Chulkov, {E. V.}",
note = "Petrov, E.K., Silkin, I.V., Menshchikova, T.V. et al. Jetp Lett. (2019) 109: 121. https://doi.org/10.1134/S0021364019020127",
year = "2019",
doi = "10.1134/S0021364019020127",
language = "English",
volume = "109",
pages = "121--125",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

RIS

TY - JOUR

T1 - Cr-Containing Ferromagnetic Film–Topological Insulator Heterostructures as Promising Materials for the Quantum Anomalous Hall Effect

AU - Petrov, E. K.

AU - Silkin, I. V.

AU - Menshchikova, T. V.

AU - Chulkov, E. V.

N1 - Petrov, E.K., Silkin, I.V., Menshchikova, T.V. et al. Jetp Lett. (2019) 109: 121. https://doi.org/10.1134/S0021364019020127

PY - 2019

Y1 - 2019

N2 - Two heterostructures consisting of a Bi 2 Se 3 topological insulator substrate and a CrI 3 or CrBi 2 Se 4 ferromagnetic insulator thin film have been theoretically studied. The calculated band structure indicates that both heterostructures exhibit the quantum anomalous Hall effect with the splitting of the topological surface state of 19 and 92 meV for CrI 3 /Bi 2 Se 3 and CrBi 2 Se 4 /Bi 2 Se 3 , respectively. It has been shown that the band gap is determined primarily by the degree of localization of the wavefunction of the topological state in the ferromagnetic film. This degree of localization depends on the height and width of the interface barrier between the substrate and ferromagnetic material. Both the height and width of the interface barrier in the CrBi 2 Se 4 /Bi 2 Se 3 system are similar to the respective characteristics of the van der Waals barrier in bulk Bi 2 Se 3 .

AB - Two heterostructures consisting of a Bi 2 Se 3 topological insulator substrate and a CrI 3 or CrBi 2 Se 4 ferromagnetic insulator thin film have been theoretically studied. The calculated band structure indicates that both heterostructures exhibit the quantum anomalous Hall effect with the splitting of the topological surface state of 19 and 92 meV for CrI 3 /Bi 2 Se 3 and CrBi 2 Se 4 /Bi 2 Se 3 , respectively. It has been shown that the band gap is determined primarily by the degree of localization of the wavefunction of the topological state in the ferromagnetic film. This degree of localization depends on the height and width of the interface barrier between the substrate and ferromagnetic material. Both the height and width of the interface barrier in the CrBi 2 Se 4 /Bi 2 Se 3 system are similar to the respective characteristics of the van der Waals barrier in bulk Bi 2 Se 3 .

UR - http://www.scopus.com/inward/record.url?scp=85064890726&partnerID=8YFLogxK

U2 - 10.1134/S0021364019020127

DO - 10.1134/S0021364019020127

M3 - Article

AN - SCOPUS:85064890726

VL - 109

SP - 121

EP - 125

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 2

ER -

ID: 49499361