Standard

Cr2O3 layers deposited on sapphire substrates by mist-CVD and RF magnetron sputtering. / Бутенко, П.Н.; Тимашов , Р.Б.; Алмаев, А.В.; Бойко, М.Е.; Сергиенко, Елена Сергеевна; Гузилова, Любовь; Чикиряка, А.В.; Шарков, М.Д.; Степанов, А.И.; Николаев, Владимир Иванович.

In: Journal of Crystal Growth, Vol. 668, 128320, 15.10.2025.

Research output: Contribution to journal › Article › peer-review

Harvard

Бутенко, ПН, Тимашов , РБ, Алмаев, АВ, Бойко, МЕ, Сергиенко, ЕС, Гузилова, Л, Чикиряка, АВ, Шарков, МД, Степанов, АИ & Николаев, ВИ 2025, 'Cr2O3 layers deposited on sapphire substrates by mist-CVD and RF magnetron sputtering', Journal of Crystal Growth, vol. 668, 128320. https://doi.org/10.1016/j.jcrysgro.2025.128320

APA

Бутенко, П. Н., Тимашов , Р. Б., Алмаев, А. В., Бойко, М. Е., Сергиенко, Е. С., Гузилова, Л., Чикиряка, А. В., Шарков, М. Д., Степанов, А. И., & Николаев, В. И. (2025). Cr2O3 layers deposited on sapphire substrates by mist-CVD and RF magnetron sputtering. Journal of Crystal Growth, 668, [128320]. https://doi.org/10.1016/j.jcrysgro.2025.128320

Vancouver

Бутенко ПН, Тимашов РБ, Алмаев АВ, Бойко МЕ, Сергиенко ЕС, Гузилова Л et al. Cr2O3 layers deposited on sapphire substrates by mist-CVD and RF magnetron sputtering. Journal of Crystal Growth. 2025 Oct 15;668. 128320. https://doi.org/10.1016/j.jcrysgro.2025.128320

Author

Бутенко, П.Н. ; Тимашов , Р.Б. ; Алмаев, А.В. ; Бойко, М.Е. ; Сергиенко, Елена Сергеевна ; Гузилова, Любовь ; Чикиряка, А.В. ; Шарков, М.Д. ; Степанов, А.И. ; Николаев, Владимир Иванович. / Cr2O3 layers deposited on sapphire substrates by mist-CVD and RF magnetron sputtering. In: Journal of Crystal Growth. 2025 ; Vol. 668.

BibTeX

@article{7c2f9513688643b68e67855558040bdd,
title = "Cr2O3 layers deposited on sapphire substrates by mist-CVD and RF magnetron sputtering",
abstract = "We have developed corundum-like Cr2O3 / α-Al2O3 heterostructures using a novel mist-CVD technique, varying the growth parameters to modify the morphology and crystallinity of the Cr2O3 films. This technique is considered as an alternative to conventional radio-frequency (RF) magnetron sputtering, which requires a subsequent annealing due to low crystal perfection of the sputtered films. Layers deposited by both techniques are analyzed. The highest crystallinity among magnetron sputtered films was achieved in case of 3-hour annealing at 350 ◦C, however, any of the films grown by mist-CVD possess the mosaic spread with less- misoriented blocks. Moreover, the mist-CVD films own a much more developed morphology with a substructure of specifically oriented crystallites, that can be modified directly during a growth process. It has been shown that the growth rates of Cr2O3 films by chemical vapor deposition are significantly higher than in the case of sputtering. Thereby, Cr2O3 / α-Al2O3 heterostructures grown by mist-CVD technique may have applications as functional semiconductor surfaces.",
author = "П.Н. Бутенко and Р.Б. Тимашов and А.В. Алмаев and М.Е. Бойко and Сергиенко, {Елена Сергеевна} and Любовь Гузилова and А.В. Чикиряка and М.Д. Шарков and А.И. Степанов and Николаев, {Владимир Иванович}",
year = "2025",
month = oct,
day = "15",
doi = "10.1016/j.jcrysgro.2025.128320",
language = "English",
volume = "668",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Cr2O3 layers deposited on sapphire substrates by mist-CVD and RF magnetron sputtering

AU - Бутенко, П.Н.

AU - Тимашов , Р.Б.

AU - Алмаев, А.В.

AU - Бойко, М.Е.

AU - Сергиенко, Елена Сергеевна

AU - Гузилова, Любовь

AU - Чикиряка, А.В.

AU - Шарков, М.Д.

AU - Степанов, А.И.

AU - Николаев, Владимир Иванович

PY - 2025/10/15

Y1 - 2025/10/15

N2 - We have developed corundum-like Cr2O3 / α-Al2O3 heterostructures using a novel mist-CVD technique, varying the growth parameters to modify the morphology and crystallinity of the Cr2O3 films. This technique is considered as an alternative to conventional radio-frequency (RF) magnetron sputtering, which requires a subsequent annealing due to low crystal perfection of the sputtered films. Layers deposited by both techniques are analyzed. The highest crystallinity among magnetron sputtered films was achieved in case of 3-hour annealing at 350 ◦C, however, any of the films grown by mist-CVD possess the mosaic spread with less- misoriented blocks. Moreover, the mist-CVD films own a much more developed morphology with a substructure of specifically oriented crystallites, that can be modified directly during a growth process. It has been shown that the growth rates of Cr2O3 films by chemical vapor deposition are significantly higher than in the case of sputtering. Thereby, Cr2O3 / α-Al2O3 heterostructures grown by mist-CVD technique may have applications as functional semiconductor surfaces.

AB - We have developed corundum-like Cr2O3 / α-Al2O3 heterostructures using a novel mist-CVD technique, varying the growth parameters to modify the morphology and crystallinity of the Cr2O3 films. This technique is considered as an alternative to conventional radio-frequency (RF) magnetron sputtering, which requires a subsequent annealing due to low crystal perfection of the sputtered films. Layers deposited by both techniques are analyzed. The highest crystallinity among magnetron sputtered films was achieved in case of 3-hour annealing at 350 ◦C, however, any of the films grown by mist-CVD possess the mosaic spread with less- misoriented blocks. Moreover, the mist-CVD films own a much more developed morphology with a substructure of specifically oriented crystallites, that can be modified directly during a growth process. It has been shown that the growth rates of Cr2O3 films by chemical vapor deposition are significantly higher than in the case of sputtering. Thereby, Cr2O3 / α-Al2O3 heterostructures grown by mist-CVD technique may have applications as functional semiconductor surfaces.

UR - https://www.mendeley.com/catalogue/e1add61a-95c4-3eec-9eb4-d488ebe1701d/

U2 - 10.1016/j.jcrysgro.2025.128320

DO - 10.1016/j.jcrysgro.2025.128320

M3 - Article

VL - 668

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

M1 - 128320

ER -

ID: 140187038