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Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications. / Maksimova, Ksenia Yu; Kozlov, Anatoly A.; Shvets, Petr V.; Koneva, Ulyana Yu; Yurkevich, Oksana V.; Lebedev, Oleg I.; Vyvenko, Oleg F.; Mikhailovskii, Vladimir Yu; Goikhman, Aleksandr Yu.

In: ACS Omega, Vol. 3, No. 2, 28.02.2018, p. 1684-1688.

Research output: Contribution to journal › Article › peer-review

Harvard

Maksimova, KY, Kozlov, AA, Shvets, PV, Koneva, UY, Yurkevich, OV, Lebedev, OI, Vyvenko, OF, Mikhailovskii, VY & Goikhman, AY 2018, 'Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications', ACS Omega, vol. 3, no. 2, pp. 1684-1688. https://doi.org/10.1021/acsomega.7b01640

APA

Maksimova, K. Y., Kozlov, A. A., Shvets, P. V., Koneva, U. Y., Yurkevich, O. V., Lebedev, O. I., Vyvenko, O. F., Mikhailovskii, V. Y., & Goikhman, A. Y. (2018). Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications. ACS Omega, 3(2), 1684-1688. https://doi.org/10.1021/acsomega.7b01640

Vancouver

Maksimova KY, Kozlov AA, Shvets PV, Koneva UY, Yurkevich OV, Lebedev OI et al. Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications. ACS Omega. 2018 Feb 28;3(2):1684-1688. https://doi.org/10.1021/acsomega.7b01640

Author

Maksimova, Ksenia Yu ; Kozlov, Anatoly A. ; Shvets, Petr V. ; Koneva, Ulyana Yu ; Yurkevich, Oksana V. ; Lebedev, Oleg I. ; Vyvenko, Oleg F. ; Mikhailovskii, Vladimir Yu ; Goikhman, Aleksandr Yu. / Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications. In: ACS Omega. 2018 ; Vol. 3, No. 2. pp. 1684-1688.

BibTeX

@article{5f1a5180bd684512abe92258f569865e,
title = "Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications",
abstract = "We report here the growth and functional properties of silicon-based nanowhisker (NW) diodes produced by the vapor-liquid-solid process using a pulsed laser deposition technique. For the first time, we demonstrate that this method could be employed to control the size and shape of silicon NWs by using a two-component catalyst material (Au/Cu {\^a}‰ 60:1). During the NW growth, copper is distributed on the outer surface of the NW, whereas gold sticks as a droplet to its top. The length of NWs is defined by the total amount of copper in the catalyst alloy droplet. The measurements of the electrical transport properties revealed that in contact with the substrate, individual NWs demonstrate typical I-V diode characteristics. Our approach can become an important new tool in the design of novel electronic components.",
keywords = "SILICON NANOWIRES, SEMICONDUCTOR NANOWIRES, ENERGY-CONVERSION, GROWTH, CU",
author = "Maksimova, {Ksenia Yu} and Kozlov, {Anatoly A.} and Shvets, {Petr V.} and Koneva, {Ulyana Yu} and Yurkevich, {Oksana V.} and Lebedev, {Oleg I.} and Vyvenko, {Oleg F.} and Mikhailovskii, {Vladimir Yu} and Goikhman, {Aleksandr Yu}",
year = "2018",
month = feb,
day = "28",
doi = "10.1021/acsomega.7b01640",
language = "English",
volume = "3",
pages = "1684--1688",
journal = "ACS Omega",
issn = "2470-1343",
publisher = "American Chemical Society",
number = "2",

}

RIS

TY - JOUR

T1 - Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications

AU - Maksimova, Ksenia Yu

AU - Kozlov, Anatoly A.

AU - Shvets, Petr V.

AU - Koneva, Ulyana Yu

AU - Yurkevich, Oksana V.

AU - Lebedev, Oleg I.

AU - Vyvenko, Oleg F.

AU - Mikhailovskii, Vladimir Yu

AU - Goikhman, Aleksandr Yu

PY - 2018/2/28

Y1 - 2018/2/28

N2 - We report here the growth and functional properties of silicon-based nanowhisker (NW) diodes produced by the vapor-liquid-solid process using a pulsed laser deposition technique. For the first time, we demonstrate that this method could be employed to control the size and shape of silicon NWs by using a two-component catalyst material (Au/Cu ≠60:1). During the NW growth, copper is distributed on the outer surface of the NW, whereas gold sticks as a droplet to its top. The length of NWs is defined by the total amount of copper in the catalyst alloy droplet. The measurements of the electrical transport properties revealed that in contact with the substrate, individual NWs demonstrate typical I-V diode characteristics. Our approach can become an important new tool in the design of novel electronic components.

AB - We report here the growth and functional properties of silicon-based nanowhisker (NW) diodes produced by the vapor-liquid-solid process using a pulsed laser deposition technique. For the first time, we demonstrate that this method could be employed to control the size and shape of silicon NWs by using a two-component catalyst material (Au/Cu ≠60:1). During the NW growth, copper is distributed on the outer surface of the NW, whereas gold sticks as a droplet to its top. The length of NWs is defined by the total amount of copper in the catalyst alloy droplet. The measurements of the electrical transport properties revealed that in contact with the substrate, individual NWs demonstrate typical I-V diode characteristics. Our approach can become an important new tool in the design of novel electronic components.

KW - SILICON NANOWIRES

KW - SEMICONDUCTOR NANOWIRES

KW - ENERGY-CONVERSION

KW - GROWTH

KW - CU

UR - http://www.scopus.com/inward/record.url?scp=85054407891&partnerID=8YFLogxK

U2 - 10.1021/acsomega.7b01640

DO - 10.1021/acsomega.7b01640

M3 - Article

AN - SCOPUS:85054407891

VL - 3

SP - 1684

EP - 1688

JO - ACS Omega

JF - ACS Omega

SN - 2470-1343

IS - 2

ER -

ID: 36165925