Conformal Growth of Radial InGaAs Quantum Wells in GaAs Nanowires

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Conformal Growth of Radial InGaAs Quantum Wells in GaAs Nanowires. / Goktas, Nebile Isik; Dubrovskii, Vladimir G.; Lapierre, Ray R.

In: Journal of Physical Chemistry Letters, Vol. 12, No. 4, 26.01.2021, p. 1275-1283.

Research output: Contribution to journal › Article › peer-review

Author

Goktas, Nebile Isik ; Dubrovskii, Vladimir G. ; Lapierre, Ray R. / Conformal Growth of Radial InGaAs Quantum Wells in GaAs Nanowires. In: Journal of Physical Chemistry Letters. 2021 ; Vol. 12, No. 4. pp. 1275-1283.

BibTeX

@article{46a66ec9db994f9bb16af9f87cb8f2ce,

title = "Conformal Growth of Radial InGaAs Quantum Wells in GaAs Nanowires",

abstract = "GaAs-InGaAs-GaAs core-shell-shell nanowire (NW) structures were grown by gas source molecular beam epitaxy using the selective-area, self-assisted, vapor-liquid-solid method. The structural, morphological, and optical properties of the NWs were examined for different growth conditions of the InGaAs shell. With increasing In concentration of the InGaAs shell, the growth transitioned from preferential deposition at the NW base to the Stranski-Krastanov growth mode where InGaAs islands formed along the NW length. This trend is explained within a nucleation model where there is a critical In flux below which the conformal growth is suppressed and the shell forms only at the NW base. Low growth temperature produced a more uniform In distribution along the NW length but resulted in quenching of the photoluminescence (PL) emission. Alternatively, reducing the shell thickness and increasing the V/III flux ratio resulted in conformal InGaAs shell growth and quantum dot-like PL emission. Our results indicate a pathway toward the conditions for conformal InGaAs shell growth required for satisfactory optoelectronic performance. ",

author = "Goktas, {Nebile Isik} and Dubrovskii, {Vladimir G.} and Lapierre, {Ray R.}",

note = "Publisher Copyright: {\textcopyright} 2021 American Chemical Society.",

year = "2021",

month = jan,

day = "26",

doi = "10.1021/acs.jpclett.0c03712",

language = "English",

volume = "12",

pages = "1275--1283",

journal = "Journal of Physical Chemistry Letters",

issn = "1948-7185",

publisher = "American Chemical Society",

number = "4",

}

RIS

TY - JOUR

T1 - Conformal Growth of Radial InGaAs Quantum Wells in GaAs Nanowires

AU - Goktas, Nebile Isik

AU - Dubrovskii, Vladimir G.

AU - Lapierre, Ray R.

PY - 2021/1/26

Y1 - 2021/1/26

N2 - GaAs-InGaAs-GaAs core-shell-shell nanowire (NW) structures were grown by gas source molecular beam epitaxy using the selective-area, self-assisted, vapor-liquid-solid method. The structural, morphological, and optical properties of the NWs were examined for different growth conditions of the InGaAs shell. With increasing In concentration of the InGaAs shell, the growth transitioned from preferential deposition at the NW base to the Stranski-Krastanov growth mode where InGaAs islands formed along the NW length. This trend is explained within a nucleation model where there is a critical In flux below which the conformal growth is suppressed and the shell forms only at the NW base. Low growth temperature produced a more uniform In distribution along the NW length but resulted in quenching of the photoluminescence (PL) emission. Alternatively, reducing the shell thickness and increasing the V/III flux ratio resulted in conformal InGaAs shell growth and quantum dot-like PL emission. Our results indicate a pathway toward the conditions for conformal InGaAs shell growth required for satisfactory optoelectronic performance.

AB - GaAs-InGaAs-GaAs core-shell-shell nanowire (NW) structures were grown by gas source molecular beam epitaxy using the selective-area, self-assisted, vapor-liquid-solid method. The structural, morphological, and optical properties of the NWs were examined for different growth conditions of the InGaAs shell. With increasing In concentration of the InGaAs shell, the growth transitioned from preferential deposition at the NW base to the Stranski-Krastanov growth mode where InGaAs islands formed along the NW length. This trend is explained within a nucleation model where there is a critical In flux below which the conformal growth is suppressed and the shell forms only at the NW base. Low growth temperature produced a more uniform In distribution along the NW length but resulted in quenching of the photoluminescence (PL) emission. Alternatively, reducing the shell thickness and increasing the V/III flux ratio resulted in conformal InGaAs shell growth and quantum dot-like PL emission. Our results indicate a pathway toward the conditions for conformal InGaAs shell growth required for satisfactory optoelectronic performance.

UR - http://www.scopus.com/inward/record.url?scp=85100731407&partnerID=8YFLogxK

U2 - 10.1021/acs.jpclett.0c03712

DO - 10.1021/acs.jpclett.0c03712

M3 - Article

C2 - 33497239

AN - SCOPUS:85100731407

VL - 12

SP - 1275

EP - 1283

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

SN - 1948-7185

IS - 4

ER -

ID: 88771381