Standard

Computer simulation of kinetic processes near a semiconductor surface at a high electric field using the particle method. / Gherm, V. E.; Mileshkina, N. V.; Semykina, E. A.

In: Journal of Physics: Condensed Matter, Vol. 4, No. 6, 019, 1992, p. 1545-1554.

Research output: Contribution to journal › Article › peer-review

Harvard

Gherm, VE, Mileshkina, NV & Semykina, EA 1992, 'Computer simulation of kinetic processes near a semiconductor surface at a high electric field using the particle method', Journal of Physics: Condensed Matter, vol. 4, no. 6, 019, pp. 1545-1554. https://doi.org/10.1088/0953-8984/4/6/019

APA

Gherm, V. E., Mileshkina, N. V., & Semykina, E. A. (1992). Computer simulation of kinetic processes near a semiconductor surface at a high electric field using the particle method. Journal of Physics: Condensed Matter, 4(6), 1545-1554. [019]. https://doi.org/10.1088/0953-8984/4/6/019

Vancouver

Gherm VE, Mileshkina NV, Semykina EA. Computer simulation of kinetic processes near a semiconductor surface at a high electric field using the particle method. Journal of Physics: Condensed Matter. 1992;4(6):1545-1554. 019. https://doi.org/10.1088/0953-8984/4/6/019

Author

Gherm, V. E. ; Mileshkina, N. V. ; Semykina, E. A. / Computer simulation of kinetic processes near a semiconductor surface at a high electric field using the particle method. In: Journal of Physics: Condensed Matter. 1992 ; Vol. 4, No. 6. pp. 1545-1554.

BibTeX

@article{dca760872caa4b80a97f4ab5587584bf,
title = "Computer simulation of kinetic processes near a semiconductor surface at a high electric field using the particle method",
abstract = "The feasibility of computer simulation of electronic relaxation at a semiconductor-vacuum interface under a strong electric field is demonstrated. A kinetic description of conduction band electrons in a space-charge region layer with a self-consistent electric field under electron-impurity and electron-phonon scattering is developed by the particle method and Monte Carlo procedure. Results for the transient electronic process in a semiconductor field emitter are given.",
author = "Gherm, {V. E.} and Mileshkina, {N. V.} and Semykina, {E. A.}",
year = "1992",
doi = "10.1088/0953-8984/4/6/019",
language = "English",
volume = "4",
pages = "1545--1554",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "6",

}

RIS

TY - JOUR

T1 - Computer simulation of kinetic processes near a semiconductor surface at a high electric field using the particle method

AU - Gherm, V. E.

AU - Mileshkina, N. V.

AU - Semykina, E. A.

PY - 1992

Y1 - 1992

N2 - The feasibility of computer simulation of electronic relaxation at a semiconductor-vacuum interface under a strong electric field is demonstrated. A kinetic description of conduction band electrons in a space-charge region layer with a self-consistent electric field under electron-impurity and electron-phonon scattering is developed by the particle method and Monte Carlo procedure. Results for the transient electronic process in a semiconductor field emitter are given.

AB - The feasibility of computer simulation of electronic relaxation at a semiconductor-vacuum interface under a strong electric field is demonstrated. A kinetic description of conduction band electrons in a space-charge region layer with a self-consistent electric field under electron-impurity and electron-phonon scattering is developed by the particle method and Monte Carlo procedure. Results for the transient electronic process in a semiconductor field emitter are given.

UR - http://www.scopus.com/inward/record.url?scp=0041691501&partnerID=8YFLogxK

U2 - 10.1088/0953-8984/4/6/019

DO - 10.1088/0953-8984/4/6/019

M3 - Article

AN - SCOPUS:0041691501

VL - 4

SP - 1545

EP - 1554

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 6

M1 - 019

ER -

ID: 18140787