Standard

COMPLEX FIELD EFFECTS ON THE SURFACES OF GaP//xAs//1// minus //x(0 less than equivalent to x less than equivalent to 1) SOLID SOLUTIONS. / Romanov, O. V.; Bozhevol'nov, V. B.

In: Soviet physics. Semiconductors, Vol. 18, No. 8, 08.1984, p. 882-884.

Research output: Contribution to journal › Article › peer-review

Harvard

Romanov, OV & Bozhevol'nov, VB 1984, 'COMPLEX FIELD EFFECTS ON THE SURFACES OF GaP//xAs//1// minus //x(0 less than equivalent to x less than equivalent to 1) SOLID SOLUTIONS.', Soviet physics. Semiconductors, vol. 18, no. 8, pp. 882-884.

APA

Romanov, O. V., & Bozhevol'nov, V. B. (1984). COMPLEX FIELD EFFECTS ON THE SURFACES OF GaP//xAs//1// minus //x(0 less than equivalent to x less than equivalent to 1) SOLID SOLUTIONS. Soviet physics. Semiconductors, 18(8), 882-884.

Vancouver

Romanov OV, Bozhevol'nov VB. COMPLEX FIELD EFFECTS ON THE SURFACES OF GaP//xAs//1// minus //x(0 less than equivalent to x less than equivalent to 1) SOLID SOLUTIONS. Soviet physics. Semiconductors. 1984 Aug;18(8):882-884.

Author

Romanov, O. V. ; Bozhevol'nov, V. B. / COMPLEX FIELD EFFECTS ON THE SURFACES OF GaP//xAs//1// minus //x(0 less than equivalent to x less than equivalent to 1) SOLID SOLUTIONS. In: Soviet physics. Semiconductors. 1984 ; Vol. 18, No. 8. pp. 882-884.

BibTeX

@article{0cf3fc5f8c4b40f58683d528372efea5,
title = "COMPLEX FIELD EFFECTS ON THE SURFACES OF GaP//xAs//1// minus //x(0 less than equivalent to x less than equivalent to 1) SOLID SOLUTIONS.",
abstract = "The authors' aim was to determine under identical conditions the electrophysical, photoelectric, and spectral characteristics of a 'real' surface and the rules governing changes in these properties with the composition of GaP//xAs//1// minus //x(0 less than equivalent to x less than equivalent to 1) solid solutions by the application of the universal method of the complex field effect in electrolytes.",
author = "Romanov, {O. V.} and Bozhevol'nov, {V. B.}",
note = "Copyright: Copyright 2004 Elsevier B.V., All rights reserved.",
year = "1984",
month = aug,
language = "English",
volume = "18",
pages = "882--884",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "8",

}

RIS

TY - JOUR

T1 - COMPLEX FIELD EFFECTS ON THE SURFACES OF GaP//xAs//1// minus //x(0 less than equivalent to x less than equivalent to 1) SOLID SOLUTIONS.

AU - Romanov, O. V.

AU - Bozhevol'nov, V. B.

N1 - Copyright: Copyright 2004 Elsevier B.V., All rights reserved.

PY - 1984/8

Y1 - 1984/8

N2 - The authors' aim was to determine under identical conditions the electrophysical, photoelectric, and spectral characteristics of a 'real' surface and the rules governing changes in these properties with the composition of GaP//xAs//1// minus //x(0 less than equivalent to x less than equivalent to 1) solid solutions by the application of the universal method of the complex field effect in electrolytes.

AB - The authors' aim was to determine under identical conditions the electrophysical, photoelectric, and spectral characteristics of a 'real' surface and the rules governing changes in these properties with the composition of GaP//xAs//1// minus //x(0 less than equivalent to x less than equivalent to 1) solid solutions by the application of the universal method of the complex field effect in electrolytes.

UR - http://www.scopus.com/inward/record.url?scp=0021474008&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0021474008

VL - 18

SP - 882

EP - 884

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 8

ER -

ID: 77321181