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Comparison of autoemission properties of tungsten/n-and p-type semiconductor systems. / Egorov, N. V.; Antonova, L. I.; Antonov, S. P.

In: Journal of Surface Investigation, Vol. 2, No. 5, 10.2008, p. 748-750.

Research output: Contribution to journal › Article › peer-review

Harvard

Egorov, NV, Antonova, LI & Antonov, SP 2008, 'Comparison of autoemission properties of tungsten/n-and p-type semiconductor systems', Journal of Surface Investigation, vol. 2, no. 5, pp. 748-750. https://doi.org/10.1134/S1027451008050145

APA

Egorov, N. V., Antonova, L. I., & Antonov, S. P. (2008). Comparison of autoemission properties of tungsten/n-and p-type semiconductor systems. Journal of Surface Investigation, 2(5), 748-750. https://doi.org/10.1134/S1027451008050145

Vancouver

Egorov NV, Antonova LI, Antonov SP. Comparison of autoemission properties of tungsten/n-and p-type semiconductor systems. Journal of Surface Investigation. 2008 Oct;2(5):748-750. https://doi.org/10.1134/S1027451008050145

Author

Egorov, N. V. ; Antonova, L. I. ; Antonov, S. P. / Comparison of autoemission properties of tungsten/n-and p-type semiconductor systems. In: Journal of Surface Investigation. 2008 ; Vol. 2, No. 5. pp. 748-750.

BibTeX

@article{b0d79988073a43fbacd2b25771783d26,
title = "Comparison of autoemission properties of tungsten/n-and p-type semiconductor systems",
abstract = "W/Cs 3Sb and W/TiO 2 field-emission cathodes have been produced and investigated. The emission characteristics obtained for both cathode types were better than for standard tungsten cathode. Physical models of these emitters have been proposed and experimentally confirmed.",
author = "Egorov, {N. V.} and Antonova, {L. I.} and Antonov, {S. P.}",
year = "2008",
month = oct,
doi = "10.1134/S1027451008050145",
language = "English",
volume = "2",
pages = "748--750",
journal = "ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ",
issn = "1027-4510",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "5",

}

RIS

TY - JOUR

T1 - Comparison of autoemission properties of tungsten/n-and p-type semiconductor systems

AU - Egorov, N. V.

AU - Antonova, L. I.

AU - Antonov, S. P.

PY - 2008/10

Y1 - 2008/10

N2 - W/Cs 3Sb and W/TiO 2 field-emission cathodes have been produced and investigated. The emission characteristics obtained for both cathode types were better than for standard tungsten cathode. Physical models of these emitters have been proposed and experimentally confirmed.

AB - W/Cs 3Sb and W/TiO 2 field-emission cathodes have been produced and investigated. The emission characteristics obtained for both cathode types were better than for standard tungsten cathode. Physical models of these emitters have been proposed and experimentally confirmed.

UR - http://www.scopus.com/inward/record.url?scp=67149146224&partnerID=8YFLogxK

U2 - 10.1134/S1027451008050145

DO - 10.1134/S1027451008050145

M3 - Article

AN - SCOPUS:67149146224

VL - 2

SP - 748

EP - 750

JO - ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ

JF - ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ

SN - 1027-4510

IS - 5

ER -

ID: 9449234