Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBE › SPbU Researchers Portal

Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBE

Research output: Contribution to journal › Article › peer-review

Laboratory of Mechanics of Bulk Nanomaterials

DOI

https://doi.org/10.1016/j.optmat.2024.115471
Final published version

P. V. Seredin
D. L. Goloshchapov
D.E. Kostomakha
Y.A. Peshkov
N. S. Buylov
S.A. Ivkov
Andrey M. Mizerov
S. N. Timoshnev
Максим Сергеевич Соболев
Евгений Викторович Убыйвовк
V.I. Zemlyakov

Original language	English
Article number	115471
Journal	Optical Materials
Volume	152
DOIs	https://doi.org/10.1016/j.optmat.2024.115471
State	Published - 1 Jun 2024

Research areas

Contact layer, GaN, PA MBE, Refractive index and photoluminescence, Silicon-doped, c-Al2O3

ID: 120231287