Chemical vapor deposition of multilayer graphene and its characterization with the auger and raman spectroscopy

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Chemical vapor deposition of multilayer graphene and its characterization with the auger and raman spectroscopy. / Bulatova, Alsu N.; Zhizhin, Evgeny; Yu, Jie; Khan, Javed; Bulatov, Marat F.

In: Journal of Nanoelectronics and Optoelectronics, Vol. 6, No. 4, 01.12.2011, p. 525-528.

Research output: Contribution to journal › Article › peer-review

Author

Bulatova, Alsu N. ; Zhizhin, Evgeny ; Yu, Jie ; Khan, Javed ; Bulatov, Marat F. / Chemical vapor deposition of multilayer graphene and its characterization with the auger and raman spectroscopy. In: Journal of Nanoelectronics and Optoelectronics. 2011 ; Vol. 6, No. 4. pp. 525-528.

BibTeX

@article{30166688e60b4547a76c491204164e04,

title = "Chemical vapor deposition of multilayer graphene and its characterization with the auger and raman spectroscopy",

abstract = "We used the chemical vapor deposition technique to obtain the large-area few-layer graphene films. The obtained multilayer graphene samples were investigated with the Auger electron spectroscopy and micro-Raman spectroscopy. The size of the domains with the two and threeatomic-plane thickness was on the order of 30 μm. The Auger and Raman spectroscopic analysis allowed us to correlate the deposition parameters with the number and quality of multilayer graphene. The Auger spectroscopy data complements the information obtained from the micro-Raman spectroscopic characterization. The obtained results can be used for further optimization of the chemical vapor deposition technology of multilayer graphene and its scaling for industrial applications.",

keywords = "Auger Electron Spectroscopy, CVD Method, Graphene Properties, Multi-Graphene, Nickel, Raman Spectroscopy",

author = "Bulatova, {Alsu N.} and Evgeny Zhizhin and Jie Yu and Javed Khan and Bulatov, {Marat F.}",

year = "2011",

month = dec,

day = "1",

doi = "10.1166/jno.2011.1206",

language = "English",

volume = "6",

pages = "525--528",

journal = "Journal of Nanoelectronics and Optoelectronics",

issn = "1555-130X",

publisher = "American Scientific Publishers",

number = "4",

}

RIS

TY - JOUR

T1 - Chemical vapor deposition of multilayer graphene and its characterization with the auger and raman spectroscopy

AU - Bulatova, Alsu N.

AU - Zhizhin, Evgeny

AU - Yu, Jie

AU - Khan, Javed

AU - Bulatov, Marat F.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We used the chemical vapor deposition technique to obtain the large-area few-layer graphene films. The obtained multilayer graphene samples were investigated with the Auger electron spectroscopy and micro-Raman spectroscopy. The size of the domains with the two and threeatomic-plane thickness was on the order of 30 μm. The Auger and Raman spectroscopic analysis allowed us to correlate the deposition parameters with the number and quality of multilayer graphene. The Auger spectroscopy data complements the information obtained from the micro-Raman spectroscopic characterization. The obtained results can be used for further optimization of the chemical vapor deposition technology of multilayer graphene and its scaling for industrial applications.

AB - We used the chemical vapor deposition technique to obtain the large-area few-layer graphene films. The obtained multilayer graphene samples were investigated with the Auger electron spectroscopy and micro-Raman spectroscopy. The size of the domains with the two and threeatomic-plane thickness was on the order of 30 μm. The Auger and Raman spectroscopic analysis allowed us to correlate the deposition parameters with the number and quality of multilayer graphene. The Auger spectroscopy data complements the information obtained from the micro-Raman spectroscopic characterization. The obtained results can be used for further optimization of the chemical vapor deposition technology of multilayer graphene and its scaling for industrial applications.

KW - Auger Electron Spectroscopy

KW - CVD Method

KW - Graphene Properties

KW - Multi-Graphene

KW - Nickel

KW - Raman Spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=84863115991&partnerID=8YFLogxK

U2 - 10.1166/jno.2011.1206

DO - 10.1166/jno.2011.1206

M3 - Article

AN - SCOPUS:84863115991

VL - 6

SP - 525

EP - 528

JO - Journal of Nanoelectronics and Optoelectronics

JF - Journal of Nanoelectronics and Optoelectronics

SN - 1555-130X

IS - 4

ER -

ID: 50002869