Research output: Contribution to journal › Article › peer-review
Characterization of the p-NiO/n-GaN heterojunction and development of ultraviolet photodiode. / Enns, Yakov; Timoshnev, Sergei; Kazakin, Alexey; Shubina, Ksenia; Uvarov, Alexander; Vorobyev, Alexander; Nikitina, Ekaterina; Mizerov, Andrey; Andreeva, Valentina; Fedorenko, Elizaveta; Koroleva, Alexandra; Zhizhin, Evgeniy.
In: Materials Science in Semiconductor Processing, Vol. 181, 108624, 10.2024.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Characterization of the p-NiO/n-GaN heterojunction and development of ultraviolet photodiode
AU - Enns, Yakov
AU - Timoshnev, Sergei
AU - Kazakin, Alexey
AU - Shubina, Ksenia
AU - Uvarov, Alexander
AU - Vorobyev, Alexander
AU - Nikitina, Ekaterina
AU - Mizerov, Andrey
AU - Andreeva, Valentina
AU - Fedorenko, Elizaveta
AU - Koroleva, Alexandra
AU - Zhizhin, Evgeniy
PY - 2024/6/14
Y1 - 2024/6/14
N2 - Nickel oxide semiconductor is a good p-type material for fabricating a p-n-heterojunction with n-type GaN semiconductor. The p-NiO/n-GaN heterojunction, which produces a type II band bias, has significant prospects for creating photosensitive devices. Herein, it is shown that a selective ultraviolet photodetector can be created based on this heterojunction. p-NiO films were formed using magnetron sputtering onto n-doped GaN epitaxial layers grown by plasma assisted molecular beam epitaxy. The structural, optical, and electronic properties of the formed nickel oxide films were studied. A mechanism for reducing dislocation density and conductivity and increasing transparency due to film annealing is proposed. It has been established that the current–voltage characteristics of the p-NiO/n-GaN heterojunction are typical for diode structures and show selective sensitivity to ultraviolet radiation. The band model and sensitivity of the fabricated ultraviolet photodiode were evaluated. The photosensitivity at zero voltage was 3.11 mA/W, the quantum yield was 0.011, and the detection ability was 8.69 × 109 Jones. The work shows the potential of using the p-NiO/n-GaN heterojunction to create ultraviolet photodetectors.
AB - Nickel oxide semiconductor is a good p-type material for fabricating a p-n-heterojunction with n-type GaN semiconductor. The p-NiO/n-GaN heterojunction, which produces a type II band bias, has significant prospects for creating photosensitive devices. Herein, it is shown that a selective ultraviolet photodetector can be created based on this heterojunction. p-NiO films were formed using magnetron sputtering onto n-doped GaN epitaxial layers grown by plasma assisted molecular beam epitaxy. The structural, optical, and electronic properties of the formed nickel oxide films were studied. A mechanism for reducing dislocation density and conductivity and increasing transparency due to film annealing is proposed. It has been established that the current–voltage characteristics of the p-NiO/n-GaN heterojunction are typical for diode structures and show selective sensitivity to ultraviolet radiation. The band model and sensitivity of the fabricated ultraviolet photodiode were evaluated. The photosensitivity at zero voltage was 3.11 mA/W, the quantum yield was 0.011, and the detection ability was 8.69 × 109 Jones. The work shows the potential of using the p-NiO/n-GaN heterojunction to create ultraviolet photodetectors.
KW - NiO
KW - GaN
KW - Wide bandgap semiconductors
KW - Photodiode
KW - --heterojunction
U2 - 10.1016/j.mssp.2024.108624
DO - 10.1016/j.mssp.2024.108624
M3 - Article
VL - 181
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
M1 - 108624
ER -
ID: 121150640