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Carrier spin dynamics in GaAs/AlGaAs quantum wells with a laterally localizing electric potential. / Cherbunin, R.V.; Kuznetsova, M.S.; Gerlovin, I.Y.; Ignatiev, I.V.; Dolgikh, Y.K.; Efimov, Y.P.; Eliseev, S.A.; Petrov, V.V.; Poltavtsev, S.V.; Larionov, A.V.; Il'In, A.I.

In: Physics of the Solid State, Vol. 51, No. 4, 2009, p. 837-840.

Research output: Contribution to journal › Article

Harvard

Cherbunin, RV, Kuznetsova, MS, Gerlovin, IY, Ignatiev, IV, Dolgikh, YK, Efimov, YP, Eliseev, SA, Petrov, VV, Poltavtsev, SV, Larionov, AV & Il'In, AI 2009, 'Carrier spin dynamics in GaAs/AlGaAs quantum wells with a laterally localizing electric potential', Physics of the Solid State, vol. 51, no. 4, pp. 837-840. https://doi.org/10.1134/S1063783409040349

APA

Cherbunin, R. V., Kuznetsova, M. S., Gerlovin, I. Y., Ignatiev, I. V., Dolgikh, Y. K., Efimov, Y. P., Eliseev, S. A., Petrov, V. V., Poltavtsev, S. V., Larionov, A. V., & Il'In, A. I. (2009). Carrier spin dynamics in GaAs/AlGaAs quantum wells with a laterally localizing electric potential. Physics of the Solid State, 51(4), 837-840. https://doi.org/10.1134/S1063783409040349

Vancouver

Cherbunin RV, Kuznetsova MS, Gerlovin IY, Ignatiev IV, Dolgikh YK, Efimov YP et al. Carrier spin dynamics in GaAs/AlGaAs quantum wells with a laterally localizing electric potential. Physics of the Solid State. 2009;51(4):837-840. https://doi.org/10.1134/S1063783409040349

Author

Cherbunin, R.V. ; Kuznetsova, M.S. ; Gerlovin, I.Y. ; Ignatiev, I.V. ; Dolgikh, Y.K. ; Efimov, Y.P. ; Eliseev, S.A. ; Petrov, V.V. ; Poltavtsev, S.V. ; Larionov, A.V. ; Il'In, A.I. / Carrier spin dynamics in GaAs/AlGaAs quantum wells with a laterally localizing electric potential. In: Physics of the Solid State. 2009 ; Vol. 51, No. 4. pp. 837-840.

BibTeX

@article{fc390a2a67964a888665cacd1eed4113,
title = "Carrier spin dynamics in GaAs/AlGaAs quantum wells with a laterally localizing electric potential",
abstract = "The spin orientation dynamics in a GaAs quantum well with a laterally nonuniform electric potential generated by a mosaic electrode deposited on the surface of the sample has been investigated using the photoinduced magneto-optical Kerr effect. It has been found that the application of a negative potential higher than 1 V to the electrode leads to more than a hundredfold increase in the spin polarization lifetime in the sample under study. It is concluded that so strong slowing down of the relaxation is caused by a combined action of two effects, namely, the spatial separation of electron and hole, which reduces the radiative recombination rate of electron-hole pair, and the localization of electron, which is accompanied by the suppression of spin relaxation processes caused by electron motion.",
keywords = "GaAs quantum well, mosaic electrode, spin life time, spin relaxation processes, Kerr effect",
author = "R.V. Cherbunin and M.S. Kuznetsova and I.Y. Gerlovin and I.V. Ignatiev and Y.K. Dolgikh and Y.P. Efimov and S.A. Eliseev and V.V. Petrov and S.V. Poltavtsev and A.V. Larionov and A.I. Il'In",
year = "2009",
doi = "10.1134/S1063783409040349",
language = "English",
volume = "51",
pages = "837--840",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "4",

}

RIS

TY - JOUR

T1 - Carrier spin dynamics in GaAs/AlGaAs quantum wells with a laterally localizing electric potential

AU - Cherbunin, R.V.

AU - Kuznetsova, M.S.

AU - Gerlovin, I.Y.

AU - Ignatiev, I.V.

AU - Dolgikh, Y.K.

AU - Efimov, Y.P.

AU - Eliseev, S.A.

AU - Petrov, V.V.

AU - Poltavtsev, S.V.

AU - Larionov, A.V.

AU - Il'In, A.I.

PY - 2009

Y1 - 2009

N2 - The spin orientation dynamics in a GaAs quantum well with a laterally nonuniform electric potential generated by a mosaic electrode deposited on the surface of the sample has been investigated using the photoinduced magneto-optical Kerr effect. It has been found that the application of a negative potential higher than 1 V to the electrode leads to more than a hundredfold increase in the spin polarization lifetime in the sample under study. It is concluded that so strong slowing down of the relaxation is caused by a combined action of two effects, namely, the spatial separation of electron and hole, which reduces the radiative recombination rate of electron-hole pair, and the localization of electron, which is accompanied by the suppression of spin relaxation processes caused by electron motion.

AB - The spin orientation dynamics in a GaAs quantum well with a laterally nonuniform electric potential generated by a mosaic electrode deposited on the surface of the sample has been investigated using the photoinduced magneto-optical Kerr effect. It has been found that the application of a negative potential higher than 1 V to the electrode leads to more than a hundredfold increase in the spin polarization lifetime in the sample under study. It is concluded that so strong slowing down of the relaxation is caused by a combined action of two effects, namely, the spatial separation of electron and hole, which reduces the radiative recombination rate of electron-hole pair, and the localization of electron, which is accompanied by the suppression of spin relaxation processes caused by electron motion.

KW - GaAs quantum well

KW - mosaic electrode

KW - spin life time

KW - spin relaxation processes

KW - Kerr effect

U2 - 10.1134/S1063783409040349

DO - 10.1134/S1063783409040349

M3 - Article

VL - 51

SP - 837

EP - 840

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 4

ER -

ID: 5046274