Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator.

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Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator. / Men'shov, V. N.; Tugushev, V. V.; Eremeev, S. V.; Echenique, P. M.; Chulkov, E. V.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, 2015.

Research output: Contribution to journal › Article

BibTeX

@article{c78c6643136648a69f957a80ae9c9537,

title = "Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator.",

author = "Men'shov, {V. N.} and Tugushev, {V. V.} and Eremeev, {S. V.} and Echenique, {P. M.} and Chulkov, {E. V.}",

year = "2015",

doi = "10.1103/PhysRevB.91.075307",

language = "English",

volume = "91",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Physical Society",

}

RIS

TY - JOUR

T1 - Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator.

AU - Men'shov, V. N.

AU - Tugushev, V. V.

AU - Eremeev, S. V.

AU - Echenique, P. M.

AU - Chulkov, E. V.

PY - 2015

Y1 - 2015

U2 - 10.1103/PhysRevB.91.075307

DO - 10.1103/PhysRevB.91.075307

M3 - Article

VL - 91

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

ER -

ID: 3983704