Research output: Contribution to journal › Literature review › peer-review
ATOMIC LAYER DEPOSITION OF TIN DIOXIDE NANOFILMS: A REVIEW. / Nazarov, D.V.; Bobrysheva, N.P.; Osmolovskaya, O.M.; Osmolovsky, M.G.; Smirnov, V.M.
In: Reviews on Advanced Materials Science, Vol. 40, 2015, p. 262-275.Research output: Contribution to journal › Literature review › peer-review
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TY - JOUR
T1 - ATOMIC LAYER DEPOSITION OF TIN DIOXIDE NANOFILMS: A REVIEW
AU - Nazarov, D.V.
AU - Bobrysheva, N.P.
AU - Osmolovskaya, O.M.
AU - Osmolovsky, M.G.
AU - Smirnov, V.M.
PY - 2015
Y1 - 2015
N2 - Due to unique electrical, optical, chemical and magnetic properties of tin dioxide, SnO2 thin films attract enormous attention as a potential material for gas sensor devices, transparent conducting oxides for microelectronics, lithium-ion batteries, supercapasitors, spintronic devices, solar cells, etc. Thin films possessing a wide variety of properties determined by thickness, morphology, structural properties, and film composition are necessary to satisfy the requirements of such a wide range of applications. At present, there are many approaches for SnO2 thin films manufacturing, the Atomic Layer Deposition (ALD) technology is considered to be the most promising and suitable method to produce thin film with a set of certain characteristics. In this paper, we present an overview of achievements in SnO2 ALD thin film preparation. The special attention is given to the selection of precursors, deposition conditions, and deposited films properties.
AB - Due to unique electrical, optical, chemical and magnetic properties of tin dioxide, SnO2 thin films attract enormous attention as a potential material for gas sensor devices, transparent conducting oxides for microelectronics, lithium-ion batteries, supercapasitors, spintronic devices, solar cells, etc. Thin films possessing a wide variety of properties determined by thickness, morphology, structural properties, and film composition are necessary to satisfy the requirements of such a wide range of applications. At present, there are many approaches for SnO2 thin films manufacturing, the Atomic Layer Deposition (ALD) technology is considered to be the most promising and suitable method to produce thin film with a set of certain characteristics. In this paper, we present an overview of achievements in SnO2 ALD thin film preparation. The special attention is given to the selection of precursors, deposition conditions, and deposited films properties.
KW - ALD
KW - tin oxide
KW - SnO2
M3 - Literature review
VL - 40
SP - 262
EP - 275
JO - Reviews on Advanced Materials Science
JF - Reviews on Advanced Materials Science
SN - 1606-5131
ER -
ID: 3941690