TY - JOUR

T1 - Arsenides-and related III-V materials-based multilayered structures for terahertz applications

T2 - Various designs and growth technology

AU - Yachmenev, Alexander E.

AU - Pushkarev, Sergey S.

AU - Reznik, Rodion R.

AU - Khabibullin, Rustam A.

AU - Ponomarev, Dmitry S.

N1 - Publisher Copyright: © 2020 Elsevier Ltd

PY - 2020/5

Y1 - 2020/5

N2 - The fabrication and investigation of single and multilayered structures have become an essential issue in the past decades since these structures directly define valuable properties and efficiency of widely used terahertz (THz) emitters and detectors. Since the development of molecular-beam epitaxy, as well as other crystal growth techniques, a variety of structural designs has appeared and has been proposed. Since that, an enormous progress has been achieved beginning from the pioneering work on photoconductivity in silicon toward different multilayered heterostructures. The last are now commonly utilized as base components in photoconductive THz emitters/detectors, quantum-cascade lasers for pulsed and continuous-wave THz spectroscopic and imaging systems providing critical fundamental and practical applications at the forefront of scientific knowledge (sensors, flexible electronics, security systems, biomedicine, and others). This review summarizes the developments in different approaches and crystal growth techniques, emphasizing the importance of using single and multilayered arsenides-and related III-V materials-based (phosphides, antimonides, bismuthides) structures to accomplish the needs of modern and existing instruments of THz science and technology.

AB - The fabrication and investigation of single and multilayered structures have become an essential issue in the past decades since these structures directly define valuable properties and efficiency of widely used terahertz (THz) emitters and detectors. Since the development of molecular-beam epitaxy, as well as other crystal growth techniques, a variety of structural designs has appeared and has been proposed. Since that, an enormous progress has been achieved beginning from the pioneering work on photoconductivity in silicon toward different multilayered heterostructures. The last are now commonly utilized as base components in photoconductive THz emitters/detectors, quantum-cascade lasers for pulsed and continuous-wave THz spectroscopic and imaging systems providing critical fundamental and practical applications at the forefront of scientific knowledge (sensors, flexible electronics, security systems, biomedicine, and others). This review summarizes the developments in different approaches and crystal growth techniques, emphasizing the importance of using single and multilayered arsenides-and related III-V materials-based (phosphides, antimonides, bismuthides) structures to accomplish the needs of modern and existing instruments of THz science and technology.

KW - A3B5 semiconductors

KW - AlAs

KW - Binary and ternary compounds

KW - Continuous-wave terahertz radiation

KW - GaAs

KW - InAs

KW - InGaAs

KW - Lattice-matched and strained layers

KW - Low-temperature grown GaAs.

KW - Molecular-beam epitaxy

KW - Multilayered heterostructure

KW - Photoconductive antenna

KW - Photoconductive materials

KW - Pulse terahertz radiation

KW - Quantum cascade laser

KW - Quantum well

KW - Superlattices

KW - Terahertz emitters and detectors

KW - Terahertz frequency range

KW - Terahertz radiation

UR - http://www.scopus.com/inward/record.url?scp=85083198600&partnerID=8YFLogxK

U2 - 10.1016/j.pcrysgrow.2020.100485

DO - 10.1016/j.pcrysgrow.2020.100485

M3 - Review article

AN - SCOPUS:85083198600

VL - 66

JO - Progress in Crystal Growth and Characterization of Materials

JF - Progress in Crystal Growth and Characterization of Materials

SN - 0960-8974

IS - 2

M1 - 100485

ER -