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Area-Selective Growth of HfS2 Thin Films via Atomic Layer Deposition at Low Temperature. / Cao, Yuanyuan; Wähler, Tobias; Park, Hyoungwon; Will, Johannes; Prihoda, Annemarie; Moses Badlyan, Narine; Fromm, Lukas; Yokosawa, Tadahiro; Wang, Bingzhe; Guldi, Dirk M.; Görling, Andreas; Maultzsch, Janina; Unruh, Tobias; Spiecker, Erdmann; Halik, Marcus; Libuda, Jörg; Bachmann, Julien.

In: Advanced Materials Interfaces, Vol. 7, No. 23, 2001493, 12.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Cao, Y, Wähler, T, Park, H, Will, J, Prihoda, A, Moses Badlyan, N, Fromm, L, Yokosawa, T, Wang, B, Guldi, DM, Görling, A, Maultzsch, J, Unruh, T, Spiecker, E, Halik, M, Libuda, J & Bachmann, J 2020, 'Area-Selective Growth of HfS2 Thin Films via Atomic Layer Deposition at Low Temperature', Advanced Materials Interfaces, vol. 7, no. 23, 2001493. https://doi.org/10.1002/admi.202001493

APA

Cao, Y., Wähler, T., Park, H., Will, J., Prihoda, A., Moses Badlyan, N., Fromm, L., Yokosawa, T., Wang, B., Guldi, D. M., Görling, A., Maultzsch, J., Unruh, T., Spiecker, E., Halik, M., Libuda, J., & Bachmann, J. (2020). Area-Selective Growth of HfS2 Thin Films via Atomic Layer Deposition at Low Temperature. Advanced Materials Interfaces, 7(23), [2001493]. https://doi.org/10.1002/admi.202001493

Vancouver

Cao Y, Wähler T, Park H, Will J, Prihoda A, Moses Badlyan N et al. Area-Selective Growth of HfS2 Thin Films via Atomic Layer Deposition at Low Temperature. Advanced Materials Interfaces. 2020 Dec;7(23). 2001493. https://doi.org/10.1002/admi.202001493

Author

Cao, Yuanyuan ; Wähler, Tobias ; Park, Hyoungwon ; Will, Johannes ; Prihoda, Annemarie ; Moses Badlyan, Narine ; Fromm, Lukas ; Yokosawa, Tadahiro ; Wang, Bingzhe ; Guldi, Dirk M. ; Görling, Andreas ; Maultzsch, Janina ; Unruh, Tobias ; Spiecker, Erdmann ; Halik, Marcus ; Libuda, Jörg ; Bachmann, Julien. / Area-Selective Growth of HfS2 Thin Films via Atomic Layer Deposition at Low Temperature. In: Advanced Materials Interfaces. 2020 ; Vol. 7, No. 23.

BibTeX

@article{23d710c234e14c2083ed9f6d77b8b065,
title = "Area-Selective Growth of HfS2 Thin Films via Atomic Layer Deposition at Low Temperature",
abstract = "The transition-metal dichalcogenide HfS2 is a promising alternative semiconductor with adequate band gap and high carrier mobility. However, a controllable growth of continuous HfS2 films with selectivity for specific surfaces at a low temperature on a large scale has not been demonstrated yet. Herein, HfS2 films are grown at 100 °C by atomic layer deposition (ALD) based on the precursors tetrakis(dimethylamido)hafnium and H2S. In situ vibrational spectroscopy allows for the definition of the temperature range over which (Me2N)4Hf chemisorbs as one monolayer. In that range, sequential exposures of the solid surface with (Me2N)4Hf and H2S result in self-limiting reactions that yield alternating surface termination with dimethylamide and thiol. Repeating the cycle grows smooth, continuous, stoichiometric films of thicknesses adjustable from angstroms to >100 nm, as demonstrated by spectroscopic ellipsometry, XRR, AFM, UV–vis and Raman spectroscopy, XPS, and TEM. The well-defined surface chemistry enables one to deposit HfS2 selectively using, for example, patterns generated in molecular self-assembled monolayers. This novel ALD reaction combines several attractive features necessary for integrating HfS2 into devices.",
keywords = "2D materials, atomic layer deposition, dichalcogenides, hafnium disulfide, thin films, OXIDATION, TRANSISTORS, SEMICONDUCTORS, BASIS-SETS, HFS2, ADSORPTION, ELECTRONICS",
author = "Yuanyuan Cao and Tobias W{\"a}hler and Hyoungwon Park and Johannes Will and Annemarie Prihoda and {Moses Badlyan}, Narine and Lukas Fromm and Tadahiro Yokosawa and Bingzhe Wang and Guldi, {Dirk M.} and Andreas G{\"o}rling and Janina Maultzsch and Tobias Unruh and Erdmann Spiecker and Marcus Halik and J{\"o}rg Libuda and Julien Bachmann",
note = "Funding Information: This research was funded by the FAU Cluster of Excellence “Engineering of Advanced Materials”, the European Research Council (ERC Consolidator Grant “Solacylin”, grant agreement 647281), the DFG Collaborative Research Center CRC 953 (project B13), the DFG research training group GRK 1896 (“In situ Microscopy with Electrons, X‐rays and Scanning Probes”), the DFG the research unit FOR 1878 {\textquoteleft}Functional Molecular Structures on Complex Oxide Surfaces', and the Federal Ministry of Education and Research of Germany (BMBF, project 05K16WE1). We thank Dr. M. K. S. Barr for her help with the XPS measurement. Y.Y. Cao thanks the China Scholarship Council (CSC) for the scholarship. Publisher Copyright: {\textcopyright} 2020 The Authors. Published by Wiley-VCH GmbH Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = dec,
doi = "10.1002/admi.202001493",
language = "English",
volume = "7",
journal = "Advanced Materials Interfaces",
issn = "2196-7350",
publisher = "Wiley-Blackwell",
number = "23",

}

RIS

TY - JOUR

T1 - Area-Selective Growth of HfS2 Thin Films via Atomic Layer Deposition at Low Temperature

AU - Cao, Yuanyuan

AU - Wähler, Tobias

AU - Park, Hyoungwon

AU - Will, Johannes

AU - Prihoda, Annemarie

AU - Moses Badlyan, Narine

AU - Fromm, Lukas

AU - Yokosawa, Tadahiro

AU - Wang, Bingzhe

AU - Guldi, Dirk M.

AU - Görling, Andreas

AU - Maultzsch, Janina

AU - Unruh, Tobias

AU - Spiecker, Erdmann

AU - Halik, Marcus

AU - Libuda, Jörg

AU - Bachmann, Julien

N1 - Funding Information: This research was funded by the FAU Cluster of Excellence “Engineering of Advanced Materials”, the European Research Council (ERC Consolidator Grant “Solacylin”, grant agreement 647281), the DFG Collaborative Research Center CRC 953 (project B13), the DFG research training group GRK 1896 (“In situ Microscopy with Electrons, X‐rays and Scanning Probes”), the DFG the research unit FOR 1878 ‘Functional Molecular Structures on Complex Oxide Surfaces', and the Federal Ministry of Education and Research of Germany (BMBF, project 05K16WE1). We thank Dr. M. K. S. Barr for her help with the XPS measurement. Y.Y. Cao thanks the China Scholarship Council (CSC) for the scholarship. Publisher Copyright: © 2020 The Authors. Published by Wiley-VCH GmbH Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/12

Y1 - 2020/12

N2 - The transition-metal dichalcogenide HfS2 is a promising alternative semiconductor with adequate band gap and high carrier mobility. However, a controllable growth of continuous HfS2 films with selectivity for specific surfaces at a low temperature on a large scale has not been demonstrated yet. Herein, HfS2 films are grown at 100 °C by atomic layer deposition (ALD) based on the precursors tetrakis(dimethylamido)hafnium and H2S. In situ vibrational spectroscopy allows for the definition of the temperature range over which (Me2N)4Hf chemisorbs as one monolayer. In that range, sequential exposures of the solid surface with (Me2N)4Hf and H2S result in self-limiting reactions that yield alternating surface termination with dimethylamide and thiol. Repeating the cycle grows smooth, continuous, stoichiometric films of thicknesses adjustable from angstroms to >100 nm, as demonstrated by spectroscopic ellipsometry, XRR, AFM, UV–vis and Raman spectroscopy, XPS, and TEM. The well-defined surface chemistry enables one to deposit HfS2 selectively using, for example, patterns generated in molecular self-assembled monolayers. This novel ALD reaction combines several attractive features necessary for integrating HfS2 into devices.

AB - The transition-metal dichalcogenide HfS2 is a promising alternative semiconductor with adequate band gap and high carrier mobility. However, a controllable growth of continuous HfS2 films with selectivity for specific surfaces at a low temperature on a large scale has not been demonstrated yet. Herein, HfS2 films are grown at 100 °C by atomic layer deposition (ALD) based on the precursors tetrakis(dimethylamido)hafnium and H2S. In situ vibrational spectroscopy allows for the definition of the temperature range over which (Me2N)4Hf chemisorbs as one monolayer. In that range, sequential exposures of the solid surface with (Me2N)4Hf and H2S result in self-limiting reactions that yield alternating surface termination with dimethylamide and thiol. Repeating the cycle grows smooth, continuous, stoichiometric films of thicknesses adjustable from angstroms to >100 nm, as demonstrated by spectroscopic ellipsometry, XRR, AFM, UV–vis and Raman spectroscopy, XPS, and TEM. The well-defined surface chemistry enables one to deposit HfS2 selectively using, for example, patterns generated in molecular self-assembled monolayers. This novel ALD reaction combines several attractive features necessary for integrating HfS2 into devices.

KW - 2D materials

KW - atomic layer deposition

KW - dichalcogenides

KW - hafnium disulfide

KW - thin films

KW - OXIDATION

KW - TRANSISTORS

KW - SEMICONDUCTORS

KW - BASIS-SETS

KW - HFS2

KW - ADSORPTION

KW - ELECTRONICS

UR - http://www.scopus.com/inward/record.url?scp=85092614582&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/39687f7b-6414-3fb1-89d9-56a728a64503/

U2 - 10.1002/admi.202001493

DO - 10.1002/admi.202001493

M3 - Article

AN - SCOPUS:85092614582

VL - 7

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 23

M1 - 2001493

ER -

ID: 70652664