TY - JOUR

T1 - Applications of synchrotron radiation X-ray techniques on the analysis of the behavior of transition metals in solar cells and single-crystalline silicon with extended defects

AU - Buonassisi, T.

AU - Heuer, M.

AU - Vyvenko, O. F.

AU - Istratov, A. A.

AU - Weber, E. R.

AU - Cai, Z.

AU - Lai, B.

AU - Ciszek, T. F.

AU - Schindler, R.

N1 - Funding Information: Helpful conversations with Eric Stach (National Center for Electron Microscopy) regarding the introductory paragraphs, and conversations with numerous colleagues including but not limited to P. Zhang, H. Väinölä, S. Riepe, M. Rinio, and J. Isenberg helped formulate the discussion of results for mc-Si. This work was funded by NREL subcontract AAT-2-31605-03, and the AG-Solar project of the government of Northrhein-Westfalia (NRW), funded through the Fraunhofer Institute for Solar Energy Systems (ISE) (Germany). We thank the Deutsche Forschungsgemeinschaft for funding the project HE 3570/1-1. Impurity-doped float-zone silicon crystal growth at the National Renewable Energy Laboratory was supported by U.S. Department of Energy Contract No. DE-AC36-99GO10337. The operations of the Advanced Light Source at Lawrence Berkeley National Laboratory are supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences Division, of the US Department of Energy under Contract No. DE-AC03-76SF00098. Use of the Advanced Photon Source was supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. W-31-109-ENG-38.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - A high flux, non-destructive X-ray synchrotron-based technique, X-ray fluorescence microscopy (μ-XRF), is able to detect metal precipitates as small as a few tens of nanometers in diameter within a silicon matrix, with micron-scale spatial resolution. When this technique is combined with the X-ray beam-induced current (XBIC) technique, one can acquire, in situ, complementary information about the elemental nature of transition metal precipitates and their recombination activity. Additionally, X-ray absorption microspectroscopy (μ-XAS) analyses yield information about the local environment of the impurity atoms and their chemical state. Model defect structures and photovoltaic-grade multicrystalline silicon (mc-Si) were studied using these techniques, and the effect of transition metal clusters on the electrical properties of good and bad regions of mc-Si are discussed in detail.

AB - A high flux, non-destructive X-ray synchrotron-based technique, X-ray fluorescence microscopy (μ-XRF), is able to detect metal precipitates as small as a few tens of nanometers in diameter within a silicon matrix, with micron-scale spatial resolution. When this technique is combined with the X-ray beam-induced current (XBIC) technique, one can acquire, in situ, complementary information about the elemental nature of transition metal precipitates and their recombination activity. Additionally, X-ray absorption microspectroscopy (μ-XAS) analyses yield information about the local environment of the impurity atoms and their chemical state. Model defect structures and photovoltaic-grade multicrystalline silicon (mc-Si) were studied using these techniques, and the effect of transition metal clusters on the electrical properties of good and bad regions of mc-Si are discussed in detail.

KW - Multicrystalline silicon

KW - Solar cells

KW - Transition metals

KW - X-ray fluorescence

UR - http://www.scopus.com/inward/record.url?scp=0346685969&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2003.09.099

DO - 10.1016/j.physb.2003.09.099

M3 - Conference article

AN - SCOPUS:0346685969

VL - 340-342

SP - 1137

EP - 1141

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -