Anti-Stokes photoluminescence of InP self-assembled quantum dots in the presence of electric current. / Ignatiev, Ivan V.; Kozin, Igor E.; Ren, Hong-Wen; Sugou, Shigeo; Masumoto, Yasuaki.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 60, No. 20, 1999, p. R14001-R14004.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Anti-Stokes photoluminescence of InP self-assembled quantum dots in the presence of electric current
AU - Ignatiev, Ivan V.
AU - Kozin, Igor E.
AU - Ren, Hong-Wen
AU - Sugou, Shigeo
AU - Masumoto, Yasuaki
PY - 1999
Y1 - 1999
N2 - An intense anti-Stokes photoluminescence was observed in a structure with InP quantum dots ~QD’s! in the presence of both a direct electric current and optical pumping below the lowest electron-hole transition in quantum dots. The discovered phenomenon provides clear evidence of deep energy levels in the vicinity of the QD’s. A simple model was proposed which allowed us to estimate the energies of the deep states and the lower limit of the product of the electron and hole relaxation rates from the QD’s to the deep states.
AB - An intense anti-Stokes photoluminescence was observed in a structure with InP quantum dots ~QD’s! in the presence of both a direct electric current and optical pumping below the lowest electron-hole transition in quantum dots. The discovered phenomenon provides clear evidence of deep energy levels in the vicinity of the QD’s. A simple model was proposed which allowed us to estimate the energies of the deep states and the lower limit of the product of the electron and hole relaxation rates from the QD’s to the deep states.
M3 - статья
VL - 60
SP - R14001-R14004
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 20
ER -
ID: 5327523