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"Anomalous" spectral photoresistive field effect in CdS crystals caused by the screening of the electron-hole interaction. / Batyrev, A.S.; Bisengaliev, R.A.; Novikov, B.V.

In: Physics of the Solid State, No. 4, 2013, p. 696-701.

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Batyrev, A.S. ; Bisengaliev, R.A. ; Novikov, B.V. / "Anomalous" spectral photoresistive field effect in CdS crystals caused by the screening of the electron-hole interaction. In: Physics of the Solid State. 2013 ; No. 4. pp. 696-701.

BibTeX

@article{8413b2895f4a41519d129dc08ad7eeaf,
title = "{"}Anomalous{"} spectral photoresistive field effect in CdS crystals caused by the screening of the electron-hole interaction",
abstract = "The changes observed in low-temperature (T = 77 K) near-band-edge photoconductivity spectra of CdS crystals in response to an external transverse electric field applied to the sample surface have been investigated. An analysis of the {"}anomalous{"} character of these changes for a number of crystals has revealed a significant role of the near-surface effects of screening of the electron-hole interaction in the formation of near-band-edge photoconductivity spectra of CdS crystals with a technological excess of cadmium near the surface. It has been shown that the depletion (enrichment) transverse electric field leads to a weakening (enhancement) of screening effects in the photoconductivity spectra of the CdS crystals. {\textcopyright} 2013 Pleiades Publishing, Ltd.",
author = "A.S. Batyrev and R.A. Bisengaliev and B.V. Novikov",
year = "2013",
doi = "10.1134/S1063783413040021",
language = "English",
pages = "696--701",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "4",

}

RIS

TY - JOUR

T1 - "Anomalous" spectral photoresistive field effect in CdS crystals caused by the screening of the electron-hole interaction

AU - Batyrev, A.S.

AU - Bisengaliev, R.A.

AU - Novikov, B.V.

PY - 2013

Y1 - 2013

N2 - The changes observed in low-temperature (T = 77 K) near-band-edge photoconductivity spectra of CdS crystals in response to an external transverse electric field applied to the sample surface have been investigated. An analysis of the "anomalous" character of these changes for a number of crystals has revealed a significant role of the near-surface effects of screening of the electron-hole interaction in the formation of near-band-edge photoconductivity spectra of CdS crystals with a technological excess of cadmium near the surface. It has been shown that the depletion (enrichment) transverse electric field leads to a weakening (enhancement) of screening effects in the photoconductivity spectra of the CdS crystals. © 2013 Pleiades Publishing, Ltd.

AB - The changes observed in low-temperature (T = 77 K) near-band-edge photoconductivity spectra of CdS crystals in response to an external transverse electric field applied to the sample surface have been investigated. An analysis of the "anomalous" character of these changes for a number of crystals has revealed a significant role of the near-surface effects of screening of the electron-hole interaction in the formation of near-band-edge photoconductivity spectra of CdS crystals with a technological excess of cadmium near the surface. It has been shown that the depletion (enrichment) transverse electric field leads to a weakening (enhancement) of screening effects in the photoconductivity spectra of the CdS crystals. © 2013 Pleiades Publishing, Ltd.

U2 - 10.1134/S1063783413040021

DO - 10.1134/S1063783413040021

M3 - Article

SP - 696

EP - 701

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 4

ER -

ID: 7521405