Research output: Contribution to journal › Article › peer-review
Annealing Temperature Effect on the Physical Properties of NiO Thin Films Grown by DC Magnetron Sputtering. / Timoshnev, Sergei; Kazakin, Alexey; Shubina, Ksenia; Andreeva, Valentina; Fedorenko, Elizaveta; Koroleva, Aleksandra; Zhizhin, Evgeniy; Koval, Olga; Kurinnaya, Alina; Shalin, Alexander; Bobrovs, Vjaceslavs; Enns, Yakov.
In: Advanced Materials Interfaces, Vol. 11, No. 9, 2300815, 22.03.2024.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Annealing Temperature Effect on the Physical Properties of NiO Thin Films Grown by DC Magnetron Sputtering
AU - Timoshnev, Sergei
AU - Kazakin, Alexey
AU - Shubina, Ksenia
AU - Andreeva, Valentina
AU - Fedorenko, Elizaveta
AU - Koroleva, Aleksandra
AU - Zhizhin, Evgeniy
AU - Koval, Olga
AU - Kurinnaya, Alina
AU - Shalin, Alexander
AU - Bobrovs, Vjaceslavs
AU - Enns, Yakov
PY - 2024/3/22
Y1 - 2024/3/22
N2 - Abstract Nickel oxide is a promising material for transparent electronics applications. This semiconductor demonstrates the possibility of modifying its physical properties depending on the method of growth and subsequent processing. Here the effects of the discharge power are reported during reactive dc magnetron sputtering, as well as the modes of subsequent annealing of NiO films, on their structural, electrical, and optical properties. NiO films are annealed at various temperatures both in an oxygen-containing environment and under vacuum conditions. Deposited NiO films have a polycrystalline structure with a preferred orientation (200) for the low discharge power mode and (111) for the high discharge power mode. However, obtained NiO films exhibit crystallinity improvement after annealing. The presence of both Ni2+ and Ni3+ oxidation states in the deposited films is found. In addition, it is shown that the relative carrier concentration (Ni3+/Ni2+ peak area ratio) can be controlled by choosing the NiO film preparation mode. The trend in this ratio corresponds to the trend in film conductivity and the number of free-charge carriers. The deposited films are semitransparent, and the estimated optical bandgap of NiO is in the range from 3.50 to 3.74 eV.
AB - Abstract Nickel oxide is a promising material for transparent electronics applications. This semiconductor demonstrates the possibility of modifying its physical properties depending on the method of growth and subsequent processing. Here the effects of the discharge power are reported during reactive dc magnetron sputtering, as well as the modes of subsequent annealing of NiO films, on their structural, electrical, and optical properties. NiO films are annealed at various temperatures both in an oxygen-containing environment and under vacuum conditions. Deposited NiO films have a polycrystalline structure with a preferred orientation (200) for the low discharge power mode and (111) for the high discharge power mode. However, obtained NiO films exhibit crystallinity improvement after annealing. The presence of both Ni2+ and Ni3+ oxidation states in the deposited films is found. In addition, it is shown that the relative carrier concentration (Ni3+/Ni2+ peak area ratio) can be controlled by choosing the NiO film preparation mode. The trend in this ratio corresponds to the trend in film conductivity and the number of free-charge carriers. The deposited films are semitransparent, and the estimated optical bandgap of NiO is in the range from 3.50 to 3.74 eV.
KW - DC magnetron sputtering
KW - electrical conductivity
KW - NiO thin films
KW - oxides
KW - X-ray photoelectron spectroscopy
UR - https://www.mendeley.com/catalogue/47c68f11-e17f-30d6-b8da-a44259139a73/
U2 - 10.1002/admi.202300815
DO - 10.1002/admi.202300815
M3 - Article
VL - 11
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
SN - 2196-7350
IS - 9
M1 - 2300815
ER -
ID: 115985026