Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data

Standard

Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data. / Davydov, V. Yu; Roginskii, E. M.; Kitaev, Yu E.; Smirnov, A. N.; Eliseyev, I. A.; Rodin, S. N.; Zavarin, E. E.; Lundin, W. V.; Nechaev, D. V.; Jmerik, V. N.; Smirnov, M. B.

In: Journal of Physics: Conference Series, Vol. 2103, No. 1, 012147, 14.12.2021.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Davydov, VY, Roginskii, EM, Kitaev, YE, Smirnov, AN, Eliseyev, IA, Rodin, SN, Zavarin, EE, Lundin, WV, Nechaev, DV, Jmerik, VN & Smirnov, MB 2021, 'Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data', Journal of Physics: Conference Series, vol. 2103, no. 1, 012147. https://doi.org/10.1088/1742-6596/2103/1/012147

APA

Davydov, V. Y., Roginskii, E. M., Kitaev, Y. E., Smirnov, A. N., Eliseyev, I. A., Rodin, S. N., Zavarin, E. E., Lundin, W. V., Nechaev, D. V., Jmerik, V. N., & Smirnov, M. B. (2021). Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data. Journal of Physics: Conference Series, 2103(1), [012147]. https://doi.org/10.1088/1742-6596/2103/1/012147

Vancouver

Davydov VY, Roginskii EM, Kitaev YE, Smirnov AN, Eliseyev IA, Rodin SN et al. Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data. Journal of Physics: Conference Series. 2021 Dec 14;2103(1). 012147. https://doi.org/10.1088/1742-6596/2103/1/012147

Author

Davydov, V. Yu ; Roginskii, E. M. ; Kitaev, Yu E. ; Smirnov, A. N. ; Eliseyev, I. A. ; Rodin, S. N. ; Zavarin, E. E. ; Lundin, W. V. ; Nechaev, D. V. ; Jmerik, V. N. ; Smirnov, M. B. / Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data. In: Journal of Physics: Conference Series. 2021 ; Vol. 2103, No. 1.

BibTeX

@article{404bdf588016443eb1695bddff35c73f,

title = "Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data",

abstract = "The results of joint theoretical and experimental studies aimed at revealing features in the Raman spectra, which can be used for evaluation of the interface quality between GaN and AlN layers in short-period GaN/AlN superlattices (SLs) are presented. The Raman spectra for SLs with sharp interface and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of random-element isodisplacement model, respectively. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, leads to conclusion that the spectral region of the A1(LO) confined phonons is very sensitive to the degree of interface sharpness. As a result of comprehensive studies, the correlations between the parameters of the A1(LO) confined phonons and the structure of SLs are obtained. The results of the complex studies can be used to optimize the parameters of the growth process in order to form structurally perfect short-period GaN/AlN SLs.",

author = "Davydov, {V. Yu} and Roginskii, {E. M.} and Kitaev, {Yu E.} and Smirnov, {A. N.} and Eliseyev, {I. A.} and Rodin, {S. N.} and Zavarin, {E. E.} and Lundin, {W. V.} and Nechaev, {D. V.} and Jmerik, {V. N.} and Smirnov, {M. B.}",

year = "2021",

month = dec,

day = "14",

doi = "10.1088/1742-6596/2103/1/012147",

language = "English",

volume = "2103",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

url = "http://physica.spb.ru/",

}

RIS

TY - JOUR

T1 - Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data

AU - Davydov, V. Yu

AU - Roginskii, E. M.

AU - Kitaev, Yu E.

AU - Smirnov, A. N.

AU - Eliseyev, I. A.

AU - Rodin, S. N.

AU - Zavarin, E. E.

AU - Lundin, W. V.

AU - Nechaev, D. V.

AU - Jmerik, V. N.

AU - Smirnov, M. B.

PY - 2021/12/14

Y1 - 2021/12/14

N2 - The results of joint theoretical and experimental studies aimed at revealing features in the Raman spectra, which can be used for evaluation of the interface quality between GaN and AlN layers in short-period GaN/AlN superlattices (SLs) are presented. The Raman spectra for SLs with sharp interface and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of random-element isodisplacement model, respectively. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, leads to conclusion that the spectral region of the A1(LO) confined phonons is very sensitive to the degree of interface sharpness. As a result of comprehensive studies, the correlations between the parameters of the A1(LO) confined phonons and the structure of SLs are obtained. The results of the complex studies can be used to optimize the parameters of the growth process in order to form structurally perfect short-period GaN/AlN SLs.

AB - The results of joint theoretical and experimental studies aimed at revealing features in the Raman spectra, which can be used for evaluation of the interface quality between GaN and AlN layers in short-period GaN/AlN superlattices (SLs) are presented. The Raman spectra for SLs with sharp interface and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of random-element isodisplacement model, respectively. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, leads to conclusion that the spectral region of the A1(LO) confined phonons is very sensitive to the degree of interface sharpness. As a result of comprehensive studies, the correlations between the parameters of the A1(LO) confined phonons and the structure of SLs are obtained. The results of the complex studies can be used to optimize the parameters of the growth process in order to form structurally perfect short-period GaN/AlN SLs.

UR - http://www.scopus.com/inward/record.url?scp=85123482209&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/2103/1/012147

DO - 10.1088/1742-6596/2103/1/012147

M3 - Conference article

AN - SCOPUS:85123482209

VL - 2103

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012147

T2 - International Conference PhysicA.SPb/2021

Y2 - 18 October 2021 through 22 October 2021

ER -

ID: 93099123