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Analysis of electrical parameters of the glasses of the system Bix(As2S3)100−x. / Siljegovic, M. V.; Lukic-Petrovic, S. R.; Sekulic, D. L.; Tverjanovich, A. S.

In: Materials Science in Semiconductor Processing, Vol. 38, 2015, p. 324-328.

Research output: Contribution to journal › Article

Harvard

Siljegovic, MV, Lukic-Petrovic, SR, Sekulic, DL & Tverjanovich, AS 2015, 'Analysis of electrical parameters of the glasses of the system Bix(As2S3)100−x', Materials Science in Semiconductor Processing, vol. 38, pp. 324-328. https://doi.org/10.1016/j.mssp.2014.11.018

APA

Siljegovic, M. V., Lukic-Petrovic, S. R., Sekulic, D. L., & Tverjanovich, A. S. (2015). Analysis of electrical parameters of the glasses of the system Bix(As2S3)100−x. Materials Science in Semiconductor Processing, 38, 324-328. https://doi.org/10.1016/j.mssp.2014.11.018

Vancouver

Siljegovic MV, Lukic-Petrovic SR, Sekulic DL, Tverjanovich AS. Analysis of electrical parameters of the glasses of the system Bix(As2S3)100−x. Materials Science in Semiconductor Processing. 2015;38:324-328. https://doi.org/10.1016/j.mssp.2014.11.018

Author

Siljegovic, M. V. ; Lukic-Petrovic, S. R. ; Sekulic, D. L. ; Tverjanovich, A. S. / Analysis of electrical parameters of the glasses of the system Bix(As2S3)100−x. In: Materials Science in Semiconductor Processing. 2015 ; Vol. 38. pp. 324-328.

BibTeX

@article{e7994e323d9844f68ccae26031db8051,
title = "Analysis of electrical parameters of the glasses of the system Bix(As2S3)100−x",
abstract = "{\textcopyright} 2014 Elsevier Ltd. All rights reserved.This work presents the results of measuring the parameters of electrical conductivity of the glasses from the system Bix(As2S3)100-x (x=1.5, 3, 5 and 7 at%), carried out in DC and AC regimes. The values of the activation energy ΔEσ and of the pre-exponentail factor σ0, obtained by fitting the DC component of the conductivity as a function of temperature, served as the basis for establishing the dominant mechanism of charge transport processes in the investigated glasses. Measurements in AC regime were performed on the samples with 5 and 7 at% Bi, and analyzed in terms of the CBH (Correlated Barrier Hopping) model.",
author = "Siljegovic, {M. V.} and Lukic-Petrovic, {S. R.} and Sekulic, {D. L.} and Tverjanovich, {A. S.}",
year = "2015",
doi = "10.1016/j.mssp.2014.11.018",
language = "English",
volume = "38",
pages = "324--328",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Analysis of electrical parameters of the glasses of the system Bix(As2S3)100−x

AU - Siljegovic, M. V.

AU - Lukic-Petrovic, S. R.

AU - Sekulic, D. L.

AU - Tverjanovich, A. S.

PY - 2015

Y1 - 2015

N2 - © 2014 Elsevier Ltd. All rights reserved.This work presents the results of measuring the parameters of electrical conductivity of the glasses from the system Bix(As2S3)100-x (x=1.5, 3, 5 and 7 at%), carried out in DC and AC regimes. The values of the activation energy ΔEσ and of the pre-exponentail factor σ0, obtained by fitting the DC component of the conductivity as a function of temperature, served as the basis for establishing the dominant mechanism of charge transport processes in the investigated glasses. Measurements in AC regime were performed on the samples with 5 and 7 at% Bi, and analyzed in terms of the CBH (Correlated Barrier Hopping) model.

AB - © 2014 Elsevier Ltd. All rights reserved.This work presents the results of measuring the parameters of electrical conductivity of the glasses from the system Bix(As2S3)100-x (x=1.5, 3, 5 and 7 at%), carried out in DC and AC regimes. The values of the activation energy ΔEσ and of the pre-exponentail factor σ0, obtained by fitting the DC component of the conductivity as a function of temperature, served as the basis for establishing the dominant mechanism of charge transport processes in the investigated glasses. Measurements in AC regime were performed on the samples with 5 and 7 at% Bi, and analyzed in terms of the CBH (Correlated Barrier Hopping) model.

U2 - 10.1016/j.mssp.2014.11.018

DO - 10.1016/j.mssp.2014.11.018

M3 - Article

VL - 38

SP - 324

EP - 328

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -

ID: 3925042