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Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory. / Rybkina, A.A.; Rybkin, A.G.; Klimovskikh, I.I.; Skirdkov, P.N.; Zvezdin, K. A. ; Zvezdin, A.K.; Shikin, A.M.

In: Nanotechnology, Vol. 31, No. 16, 165201, 17.04.2020, p. 165201.

Research output: Contribution to journal › Article › peer-review

Harvard

Rybkina, AA, Rybkin, AG, Klimovskikh, II, Skirdkov, PN, Zvezdin, KA, Zvezdin, AK & Shikin, AM 2020, 'Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory', Nanotechnology, vol. 31, no. 16, 165201, pp. 165201. https://doi.org/10.1088/1361-6528/ab6470

APA

Rybkina, A. A., Rybkin, A. G., Klimovskikh, I. I., Skirdkov, P. N., Zvezdin, K. A., Zvezdin, A. K., & Shikin, A. M. (2020). Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory. Nanotechnology, 31(16), 165201. [165201]. https://doi.org/10.1088/1361-6528/ab6470

Vancouver

Rybkina AA, Rybkin AG, Klimovskikh II, Skirdkov PN, Zvezdin KA, Zvezdin AK et al. Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory. Nanotechnology. 2020 Apr 17;31(16):165201. 165201. https://doi.org/10.1088/1361-6528/ab6470

Author

Rybkina, A.A. ; Rybkin, A.G. ; Klimovskikh, I.I. ; Skirdkov, P.N. ; Zvezdin, K. A. ; Zvezdin, A.K. ; Shikin, A.M. / Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory. In: Nanotechnology. 2020 ; Vol. 31, No. 16. pp. 165201.

BibTeX

@article{85747795597d4e5ea98763dd6ed1c17d,
title = "Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory",
abstract = "The non-volatile spin-orbit torque magnetic random access memory (SOT-MRAM) is very attractive memory technology for the nearest future computers because of its various advantages such as non-volatility, high density and scalability. In the present work we propose a model of a graphene recording device for the SOT-MRAM unit cell consisting of a quasi-freestanding graphene intercalated with Au and an ultra-thin Pt layer sandwiched between graphene and a magnetic tunnel junction. As a result of using the claimed graphene recording memory element a faster operation and lower energy consumption will be achieved under the recording information by reducing the electric current required for record. The efficiency of the graphene recording element was confirmed by the experimental results and the theoretical estimations.",
keywords = "MRAM, SOT MRAM, memory, память, 2D spintronics, graphene, spin–orbit torque magnetoresistive random access memory, SOT-MRAM, spin–orbit coupling, spin-orbit coupling, spin-orbit torque magnetoresistive random access memory, grapheme, SPINTRONICS",
author = "A.A. Rybkina and A.G. Rybkin and I.I. Klimovskikh and P.N. Skirdkov and Zvezdin, {K. A.} and A.K. Zvezdin and A.M. Shikin",
year = "2020",
month = apr,
day = "17",
doi = "10.1088/1361-6528/ab6470",
language = "English",
volume = "31",
pages = "165201",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "16",

}

RIS

TY - JOUR

T1 - Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory

AU - Rybkina, A.A.

AU - Rybkin, A.G.

AU - Klimovskikh, I.I.

AU - Skirdkov, P.N.

AU - Zvezdin, K. A.

AU - Zvezdin, A.K.

AU - Shikin, A.M.

PY - 2020/4/17

Y1 - 2020/4/17

N2 - The non-volatile spin-orbit torque magnetic random access memory (SOT-MRAM) is very attractive memory technology for the nearest future computers because of its various advantages such as non-volatility, high density and scalability. In the present work we propose a model of a graphene recording device for the SOT-MRAM unit cell consisting of a quasi-freestanding graphene intercalated with Au and an ultra-thin Pt layer sandwiched between graphene and a magnetic tunnel junction. As a result of using the claimed graphene recording memory element a faster operation and lower energy consumption will be achieved under the recording information by reducing the electric current required for record. The efficiency of the graphene recording element was confirmed by the experimental results and the theoretical estimations.

AB - The non-volatile spin-orbit torque magnetic random access memory (SOT-MRAM) is very attractive memory technology for the nearest future computers because of its various advantages such as non-volatility, high density and scalability. In the present work we propose a model of a graphene recording device for the SOT-MRAM unit cell consisting of a quasi-freestanding graphene intercalated with Au and an ultra-thin Pt layer sandwiched between graphene and a magnetic tunnel junction. As a result of using the claimed graphene recording memory element a faster operation and lower energy consumption will be achieved under the recording information by reducing the electric current required for record. The efficiency of the graphene recording element was confirmed by the experimental results and the theoretical estimations.

KW - MRAM, SOT MRAM, memory, память

KW - 2D spintronics

KW - graphene

KW - spin–orbit torque magnetoresistive random access memory

KW - SOT-MRAM

KW - spin–orbit coupling

KW - spin-orbit coupling

KW - spin-orbit torque magnetoresistive random access memory

KW - grapheme

KW - SPINTRONICS

UR - https://iopscience.iop.org/article/10.1088/1361-6528/ab6470

UR - http://www.scopus.com/inward/record.url?scp=85079017779&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/68fb382d-6f01-3325-bea7-c29c941b3992/

U2 - 10.1088/1361-6528/ab6470

DO - 10.1088/1361-6528/ab6470

M3 - Article

VL - 31

SP - 165201

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 16

M1 - 165201

ER -

ID: 49500075