Research output: Contribution to journal › Article › peer-review
A Complicated Route from Disorder to Order in Antimony–Tellurium Binary Phase Change Materials. / Zheng, Yonghui; Song, Wenxiong; Song, Zhitang; Zhang, Yuanyuan; Xin, Tianjiao; Liu, Cheng; Xue, Yuan; Song, Sannian; Liu, Bo; Lin, Xiaoling; Kuznetsov, Vladimir G.; Tupitsyn, Ilya I.; Kolobov, Alexander V.; Cheng, Yan.
In: Advanced Science, Vol. 11, No. 9, e2301021, 06.03.2024.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - A Complicated Route from Disorder to Order in Antimony–Tellurium Binary Phase Change Materials
AU - Zheng, Yonghui
AU - Song, Wenxiong
AU - Song, Zhitang
AU - Zhang, Yuanyuan
AU - Xin, Tianjiao
AU - Liu, Cheng
AU - Xue, Yuan
AU - Song, Sannian
AU - Liu, Bo
AU - Lin, Xiaoling
AU - Kuznetsov, Vladimir G.
AU - Tupitsyn, Ilya I.
AU - Kolobov, Alexander V.
AU - Cheng, Yan
PY - 2024/3/6
Y1 - 2024/3/6
N2 - The disorder-to-order (crystallization) process in phase-change materials determines the speed and storage polymorphism of phase-change memory devices. Only by clarifying the fine-structure variation can the devices be insightfully designed, and encode and store information. As essentialphase-change parent materials, the crystallized Sb–Te binary system isgenerally considered to have the cationic/anionic site occupied by Sb/Teatoms. Here, direct atomic identification and simulation demonstrate that theultrafast crystallization speed of Sb–Te materials is due to the random nature of lattice site occupation by different classes of atoms with the resulting octahedral motifs having high similarity to the amorphous state. It is furtherproved that after atomic ordering with disordered chemical occupation,chemical ordering takes place, which results in different storage states with different resistance values. These new insights into the complicated route from disorder to order will play an essential role in designing neuromorphic devices with varying polymorphisms.
AB - The disorder-to-order (crystallization) process in phase-change materials determines the speed and storage polymorphism of phase-change memory devices. Only by clarifying the fine-structure variation can the devices be insightfully designed, and encode and store information. As essentialphase-change parent materials, the crystallized Sb–Te binary system isgenerally considered to have the cationic/anionic site occupied by Sb/Teatoms. Here, direct atomic identification and simulation demonstrate that theultrafast crystallization speed of Sb–Te materials is due to the random nature of lattice site occupation by different classes of atoms with the resulting octahedral motifs having high similarity to the amorphous state. It is furtherproved that after atomic ordering with disordered chemical occupation,chemical ordering takes place, which results in different storage states with different resistance values. These new insights into the complicated route from disorder to order will play an essential role in designing neuromorphic devices with varying polymorphisms.
KW - antimony–tellurium binary materials
KW - atomic structure
KW - phase transition mechanism
KW - phase-change materials
KW - spherical aberration-corrected transmission electron microscope
UR - https://www.mendeley.com/catalogue/38d7fdc1-82ad-3bc3-8438-77e27489e66a/
U2 - 10.1002/advs.202301021
DO - 10.1002/advs.202301021
M3 - Article
C2 - 38133500
VL - 11
JO - Advanced Science
JF - Advanced Science
SN - 2198-3844
IS - 9
M1 - e2301021
ER -
ID: 115217822