Молекулярно-пучковая эпитаксия метаморфного буфера для InGaAs/InP фотодетекторов с высокой фоточувствительностью в диапазоне 2.2

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Молекулярно-пучковая эпитаксия метаморфного буфера для InGaAs/InP фотодетекторов с высокой фоточувствительностью в диапазоне 2.2–2.6 мкм. / Василькова, Елена Игоревна; Пирогов, Евгений Викторович; Соболев, Максим Сергеевич; Убыйвовк, Евгений Викторович; Мизиров, Андрей Михайлович; Середин, Павел Владимирович.

In: Конденсированные среды и межфазные границы, Vol. 25, No. 1, 2023, p. 20-26.

Research output: Contribution to journal › Article › peer-review

Author

Василькова, Елена Игоревна ; Пирогов, Евгений Викторович ; Соболев, Максим Сергеевич ; Убыйвовк, Евгений Викторович ; Мизиров, Андрей Михайлович ; Середин, Павел Владимирович. / Молекулярно-пучковая эпитаксия метаморфного буфера для InGaAs/InP фотодетекторов с высокой фоточувствительностью в диапазоне 2.2–2.6 мкм. In: Конденсированные среды и межфазные границы. 2023 ; Vol. 25, No. 1. pp. 20-26.

BibTeX

@article{556a16ef3a3841b6b8350dbb49db973f,

title = "Молекулярно-пучковая эпитаксия метаморфного буфера для InGaAs/InP фотодетекторов с высокой фоточувствительностью в диапазоне 2.2–2.6 мкм",

abstract = "The present work is concerned with finding optimal technological conditions for the synthesis of heterostructures with a metamorphic buffer for InGaAs/InP photodetectors in the wavelength range of 2.2–2.6 um using molecular beam epitaxy. Three choices of buffer structure differing in design and growth parameters were proposed. The internal structure of the grown samples was investigated by X-ray diffraction and transmission electron microscopy. Experimental data analysis has shown that the greatest degree of elastic strain relaxation in the InGaAs active layer was achieved in the sample where the metamorphic buffer formation ended with a consecutive increase and decrease in temperature. The said buffer also had InAs/InAlAs superlattice inserts. The dislocation density in this sample turned out to be minimal out of three, which allowed us to conclude that the described heterostructure configuration appears to be the most appropriate for manufacturing of short wavelength infrared range pin-photodetectors with high photosensitivity.",

keywords = "Metamorphic buffer, Molecular beam epitaxy, Short wavelength infrared range photodetectors, Transmission electron microscopy, X-ray diffraction analysis",

author = "Василькова, {Елена Игоревна} and Пирогов, {Евгений Викторович} and Соболев, {Максим Сергеевич} and Убыйвовк, {Евгений Викторович} and Мизиров, {Андрей Михайлович} and Середин, {Павел Владимирович}",

year = "2023",

doi = "10.17308/kcmf.2023.25/10972",

language = "русский",

volume = "25",

pages = "20--26",

journal = "Конденсированные среды и межфазные границы",

issn = "1606-867X",

publisher = "Voronezh State University",

number = "1",

}

RIS

TY - JOUR

T1 - Молекулярно-пучковая эпитаксия метаморфного буфера для InGaAs/InP фотодетекторов с высокой фоточувствительностью в диапазоне 2.2–2.6 мкм

AU - Василькова, Елена Игоревна

AU - Пирогов, Евгений Викторович

AU - Соболев, Максим Сергеевич

AU - Убыйвовк, Евгений Викторович

AU - Мизиров, Андрей Михайлович

AU - Середин, Павел Владимирович

PY - 2023

Y1 - 2023

N2 - The present work is concerned with finding optimal technological conditions for the synthesis of heterostructures with a metamorphic buffer for InGaAs/InP photodetectors in the wavelength range of 2.2–2.6 um using molecular beam epitaxy. Three choices of buffer structure differing in design and growth parameters were proposed. The internal structure of the grown samples was investigated by X-ray diffraction and transmission electron microscopy. Experimental data analysis has shown that the greatest degree of elastic strain relaxation in the InGaAs active layer was achieved in the sample where the metamorphic buffer formation ended with a consecutive increase and decrease in temperature. The said buffer also had InAs/InAlAs superlattice inserts. The dislocation density in this sample turned out to be minimal out of three, which allowed us to conclude that the described heterostructure configuration appears to be the most appropriate for manufacturing of short wavelength infrared range pin-photodetectors with high photosensitivity.

AB - The present work is concerned with finding optimal technological conditions for the synthesis of heterostructures with a metamorphic buffer for InGaAs/InP photodetectors in the wavelength range of 2.2–2.6 um using molecular beam epitaxy. Three choices of buffer structure differing in design and growth parameters were proposed. The internal structure of the grown samples was investigated by X-ray diffraction and transmission electron microscopy. Experimental data analysis has shown that the greatest degree of elastic strain relaxation in the InGaAs active layer was achieved in the sample where the metamorphic buffer formation ended with a consecutive increase and decrease in temperature. The said buffer also had InAs/InAlAs superlattice inserts. The dislocation density in this sample turned out to be minimal out of three, which allowed us to conclude that the described heterostructure configuration appears to be the most appropriate for manufacturing of short wavelength infrared range pin-photodetectors with high photosensitivity.

KW - Metamorphic buffer

KW - Molecular beam epitaxy

KW - Short wavelength infrared range photodetectors

KW - Transmission electron microscopy

KW - X-ray diffraction analysis

UR - https://www.mendeley.com/catalogue/f534f169-4d51-3c66-913f-6e4ec40ec33a/

U2 - 10.17308/kcmf.2023.25/10972

DO - 10.17308/kcmf.2023.25/10972

M3 - статья

VL - 25

SP - 20

EP - 26

JO - Конденсированные среды и межфазные границы

JF - Конденсированные среды и межфазные границы

SN - 1606-867X

IS - 1

ER -

ID: 105650791