Unoccupied Electron States of Ultrathin Quaterphenyl Films on the Surfaces of Layered CdS and Oxidized Silicon

A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, V. S. Sobolev, E. V. Zhizhin, S. A. Pshenichnuk, N. L. Asfandiarov, B. Handke

Результат исследований: Научные публикации в периодических изданияхстатьярецензирование


Abstract: Some results of studying the unoccupied electron states and the formation of a boundary potential barrier during the thermal vacuum deposition of ultrathin 4-quaterphenyl oligophenyl films onto the surfaces of CdS and oxidized silicon were presented. Using X-ray photoelectron spectroscopy (XPS), the atomic Cd and S concentrations were established to be the same on the surface of a 75-nm CdS layer formed by atomic layer deposition (ALD). The electron characteristics of 4-quaterpheyn films with a thickness of up to 8 nm were studied in the process of their deposition onto the surface of a formed CdS layer and the surface of oxidized silicon by total current spectroscopy (TCS) within an energy range from 5 to 20 eV above EF. The energy positions of major maxima in the fine structure of the total current spectra (FSTCS) of 4-quaterphenyl films were established. The positions of maxima were reproducible, when the two selected materials of substrates were used. A slight decrease in the work function from 4.2 to 4.1 eV during the thermal deposition of 4-quaterpheynl onto the CdS surface was established. The work function was revealed to grow from 4.2 to 4.5 eV, when a 4-quaterphenyl film was deposited onto the surface of oxidized silicon. Some possible mechanisms of physicochemical interaction between the 4-quaterphenyl film and the surfaces of the studied substrates that lead to different work function values observed on these substrates were discussed.

Язык оригиналаанглийский
Страницы (с-по)1333-1338
ЖурналPhysics of the Solid State
Номер выпуска8
СостояниеОпубликовано - 2021

Предметные области Scopus

  • Электроника, оптика и магнитные материалы
  • Физика конденсатов


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