Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. No one of these stages is supposed to be the limiting one. Calculated variations of growth rate and impurity concentrations along the growing layer fit experimental data well.
Язык оригинала | английский |
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Номер статьи | 002 |
Страницы (с-по) | 1935-1943 |
Число страниц | 9 |
Журнал | Semiconductor Science and Technology |
Том | 8 |
Номер выпуска | 11 |
DOI | |
Состояние | Опубликовано - 1 дек 1993 |
ID: 39890827