DOI

  • V. L. Dostov
  • I. P. Ipatova
  • A. Yu Kulikov
  • Yu V. Zhyliaev

A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. No one of these stages is supposed to be the limiting one. Calculated variations of growth rate and impurity concentrations along the growing layer fit experimental data well.

Язык оригиналаанглийский
Номер статьи002
Страницы (с-по)1935-1943
Число страниц9
ЖурналSemiconductor Science and Technology
Том8
Номер выпуска11
DOI
СостояниеОпубликовано - 1 дек 1993

    Предметные области Scopus

  • Электроника, оптика и магнитные материалы
  • Физика конденсатов
  • Электротехника и электроника
  • Химия материалов

ID: 39890827