Synthesis and Electrophysical Characteristics
of VO2-Based Nanostructures with a Complicated Architecture on a Silicon Surface

D.V. Nazarov; O.M. Osmolovskaya; V.M. Smirnov; I.V. Murin; A.S. Loshachenko

doi:10.1134/S1070363213080185

Synthesis and Electrophysical Characteristics of VO2-Based Nanostructures with a Complicated Architecture on a Silicon Surface

D.V. Nazarov, O.M. Osmolovskaya, V.M. Smirnov, I.V. Murin, A.S. Loshachenko

Результат исследований: Научные публикации в периодических изданиях › статья

1 Цитирования (Scopus)

Аннотация

Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130–160 and 100–110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO2 affects the phase transition characteristics.

Язык оригинала	английский
Страницы (с-по)	1586-1588
Журнал	Russian Journal of General Chemistry
Том	83
Номер выпуска	8
DOI	https://doi.org/10.1134/S1070363213080185
Состояние	Опубликовано - 2013

Доступ к документу

10.1134/S1070363213080185

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Цитировать

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abstract = "Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130–160 and 100–110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO2 affects the phase transition characteristics.",

author = "D.V. Nazarov and O.M. Osmolovskaya and V.M. Smirnov and I.V. Murin and A.S. Loshachenko",

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Synthesis and Electrophysical Characteristics of VO2-Based Nanostructures with a Complicated Architecture on a Silicon Surface. / Nazarov, D.V.; Osmolovskaya, O.M.; Smirnov, V.M.; Murin, I.V.; Loshachenko, A.S.

В: Russian Journal of General Chemistry, Том 83, № 8, 2013, стр. 1586-1588.

Результат исследований: Научные публикации в периодических изданиях › статья

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T1 - Synthesis and Electrophysical Characteristics of VO2-Based Nanostructures with a Complicated Architecture on a Silicon Surface

AU - Nazarov, D.V.

AU - Osmolovskaya, O.M.

AU - Smirnov, V.M.

AU - Murin, I.V.

AU - Loshachenko, A.S.

PY - 2013

Y1 - 2013

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AB - Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130–160 and 100–110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO2 affects the phase transition characteristics.

U2 - 10.1134/S1070363213080185

DO - 10.1134/S1070363213080185

M3 - Article

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EP - 1588

JO - Russian Journal of General Chemistry

JF - Russian Journal of General Chemistry

SN - 1070-3632

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