Synthesis and Electrophysical Characteristics of VO2-Based Nanostructures with a Complicated Architecture on a Silicon Surface

D.V. Nazarov, O.M. Osmolovskaya, V.M. Smirnov, I.V. Murin, A.S. Loshachenko

Результат исследований: Научные публикации в периодических изданияхстатья

1 Цитирования (Scopus)

Аннотация

Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130–160 and 100–110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO2 affects the phase transition characteristics.
Язык оригиналаанглийский
Страницы (с-по)1586-1588
ЖурналRussian Journal of General Chemistry
Том83
Номер выпуска8
DOI
СостояниеОпубликовано - 2013

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