Studying the Semiconductor–Metal Phase Transition in Nanoscale Vanadium Dioxide, Doped with Ions of 3d-Elements on a Silicon Surface

Результат исследований: Научные публикации в периодических изданияхстатья

Аннотация

Nanoscale vanadium dioxide doped with chromium and iron is obtained via molecular layering on the surface of a singlecrystal silicon. The qualitative and quantitative composition of the samples is determined by photometry and magnetochemical analysis. The morphology is examined by AFM and SEM. Two independent methods (magnetic susceptibility and impedance spectroscopy) show the presence of the semiconductor metal phase transition in the obtained structures in the range 100–125 K. The considerable influence of the alloying element content on the characteristics of the phase transition, including its temperature, is established.
Язык оригиналаанглийский
Страницы (с-по)271-274
ЖурналBulletin of the Russian Academy of Sciences: Physics
Том77
Номер выпуска3
DOI
СостояниеОпубликовано - 2013

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