Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)

V. Yu Davydov, D. Yu Usachov, S. P. Lebedev, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, P. A. Alekseev, M. S. Dunaevskiy, O. Yu Vilkov, A. G. Rybkin, A. A. Lebedev

Результат исследований: Научные публикации в периодических изданияхстатья

23 Цитирования (Scopus)

Выдержка

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.

Язык оригиналаанглийский
Страницы (с-по)1072-1080
Число страниц9
ЖурналSemiconductors
Том51
Номер выпуска8
DOI
СостояниеОпубликовано - 1 авг 2017

Отпечаток

Graphite
Graphene
Electronic structure
graphene
Crystal structure
electronic structure
crystal structure
X ray absorption spectroscopy
Low energy electron diffraction
Argon
Photoelectron spectroscopy
chemical properties
Electronic properties
Chemical properties
thermal decomposition
Raman spectroscopy
Structural properties
Atomic force microscopy
absorption spectroscopy
Pyrolysis

Предметные области Scopus

  • Электроника, оптика и магнитные материалы
  • Атомная и молекулярная физика и оптика
  • Физика конденсатов

Цитировать

Davydov, V. Y., Usachov, D. Y., Lebedev, S. P., Smirnov, A. N., Levitskii, V. S., Eliseyev, I. A., ... Lebedev, A. A. (2017). Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). Semiconductors, 51(8), 1072-1080. https://doi.org/10.1134/S1063782617080073
Davydov, V. Yu ; Usachov, D. Yu ; Lebedev, S. P. ; Smirnov, A. N. ; Levitskii, V. S. ; Eliseyev, I. A. ; Alekseev, P. A. ; Dunaevskiy, M. S. ; Vilkov, O. Yu ; Rybkin, A. G. ; Lebedev, A. A. / Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). В: Semiconductors. 2017 ; Том 51, № 8. стр. 1072-1080.
@article{467665b5be9d4819863f5f74c8bf7af8,
title = "Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)",
abstract = "The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.",
author = "Davydov, {V. Yu} and Usachov, {D. Yu} and Lebedev, {S. P.} and Smirnov, {A. N.} and Levitskii, {V. S.} and Eliseyev, {I. A.} and Alekseev, {P. A.} and Dunaevskiy, {M. S.} and Vilkov, {O. Yu} and Rybkin, {A. G.} and Lebedev, {A. A.}",
year = "2017",
month = "8",
day = "1",
doi = "10.1134/S1063782617080073",
language = "English",
volume = "51",
pages = "1072--1080",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "8",

}

Davydov, VY, Usachov, DY, Lebedev, SP, Smirnov, AN, Levitskii, VS, Eliseyev, IA, Alekseev, PA, Dunaevskiy, MS, Vilkov, OY, Rybkin, AG & Lebedev, AA 2017, 'Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)', Semiconductors, том. 51, № 8, стр. 1072-1080. https://doi.org/10.1134/S1063782617080073

Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). / Davydov, V. Yu; Usachov, D. Yu; Lebedev, S. P.; Smirnov, A. N.; Levitskii, V. S.; Eliseyev, I. A.; Alekseev, P. A.; Dunaevskiy, M. S.; Vilkov, O. Yu; Rybkin, A. G.; Lebedev, A. A.

В: Semiconductors, Том 51, № 8, 01.08.2017, стр. 1072-1080.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)

AU - Davydov, V. Yu

AU - Usachov, D. Yu

AU - Lebedev, S. P.

AU - Smirnov, A. N.

AU - Levitskii, V. S.

AU - Eliseyev, I. A.

AU - Alekseev, P. A.

AU - Dunaevskiy, M. S.

AU - Vilkov, O. Yu

AU - Rybkin, A. G.

AU - Lebedev, A. A.

PY - 2017/8/1

Y1 - 2017/8/1

N2 - The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.

AB - The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.

UR - http://www.scopus.com/inward/record.url?scp=85028356828&partnerID=8YFLogxK

U2 - 10.1134/S1063782617080073

DO - 10.1134/S1063782617080073

M3 - Article

AN - SCOPUS:85028356828

VL - 51

SP - 1072

EP - 1080

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 8

ER -

Davydov VY, Usachov DY, Lebedev SP, Smirnov AN, Levitskii VS, Eliseyev IA и соавт. Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). Semiconductors. 2017 Авг. 1;51(8):1072-1080. https://doi.org/10.1134/S1063782617080073