Spin-polarized Fermi surface, hole-doping and band gap in graphene with boron impurities

Alexander V. Fedorov, Lada V. Yashina, Oleg Yu Vilkov, Clemens Laubschat, Denis V. Vyalikh, Dmitry Yu Usachov

Результат исследований: Научные публикации в периодических изданияхстатья

1 цитирование (Scopus)

Выдержка

Embedding foreign atoms in graphene and interchanging the underlying substrate are proved to be efficient methods for manipulating the properties of graphene. Combining ARPES experiments with DFT calculations we show that boron-doped graphene (B-graphene) grown on a Co(0001) substrate by chemical vapor deposition (CVD) becomes hole doped and its Fermi surface near the K-point reveals strongly spin-polarized states. The latter stems from the spin-polarized mini Dirac cone that is an intrinsic two-dimensional feature of the graphene/Co(0001) interface and is formed by a mixture of C 2pz and Co 3d states. Since the CVD method allows the achievement of up to 20 at% of incorporated B atoms, this provides a certain flexibility for handling the spin-polarized properties of the system. We also show that the bonding of the B-graphene layer to the Co(0001) substrate can be released by intercalation of Li into the interface. This allows the exploration of the doping effect in detail. Finally, our ARPES data indicate a gap opening in the Dirac cone as a result of the highly unbalanced boron concentrations in the two graphene sublattices.

Язык оригиналаанглийский
Страницы (с-по)22810-22817
Число страниц8
ЖурналNanoscale
Том10
Номер выпуска48
DOI
СостояниеОпубликовано - 28 дек 2018

Отпечаток

Boron
Fermi surface
Graphite
Graphene
Energy gap
Doping (additives)
Impurities
Cones
Chemical vapor deposition
Substrates
Atoms
Intercalation
Discrete Fourier transforms
Experiments

Предметные области Scopus

  • Материаловедение (все)

Цитировать

Fedorov, A. V., Yashina, L. V., Vilkov, O. Y., Laubschat, C., Vyalikh, D. V., & Usachov, D. Y. (2018). Spin-polarized Fermi surface, hole-doping and band gap in graphene with boron impurities. Nanoscale, 10(48), 22810-22817. https://doi.org/10.1039/c8nr08339h
Fedorov, Alexander V. ; Yashina, Lada V. ; Vilkov, Oleg Yu ; Laubschat, Clemens ; Vyalikh, Denis V. ; Usachov, Dmitry Yu. / Spin-polarized Fermi surface, hole-doping and band gap in graphene with boron impurities. В: Nanoscale. 2018 ; Том 10, № 48. стр. 22810-22817.
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Fedorov, AV, Yashina, LV, Vilkov, OY, Laubschat, C, Vyalikh, DV & Usachov, DY 2018, 'Spin-polarized Fermi surface, hole-doping and band gap in graphene with boron impurities', Nanoscale, том. 10, № 48, стр. 22810-22817. https://doi.org/10.1039/c8nr08339h

Spin-polarized Fermi surface, hole-doping and band gap in graphene with boron impurities. / Fedorov, Alexander V.; Yashina, Lada V.; Vilkov, Oleg Yu; Laubschat, Clemens; Vyalikh, Denis V.; Usachov, Dmitry Yu.

В: Nanoscale, Том 10, № 48, 28.12.2018, стр. 22810-22817.

Результат исследований: Научные публикации в периодических изданияхстатья

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AU - Vyalikh, Denis V.

AU - Usachov, Dmitry Yu

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N2 - Embedding foreign atoms in graphene and interchanging the underlying substrate are proved to be efficient methods for manipulating the properties of graphene. Combining ARPES experiments with DFT calculations we show that boron-doped graphene (B-graphene) grown on a Co(0001) substrate by chemical vapor deposition (CVD) becomes hole doped and its Fermi surface near the K-point reveals strongly spin-polarized states. The latter stems from the spin-polarized mini Dirac cone that is an intrinsic two-dimensional feature of the graphene/Co(0001) interface and is formed by a mixture of C 2pz and Co 3d states. Since the CVD method allows the achievement of up to 20 at% of incorporated B atoms, this provides a certain flexibility for handling the spin-polarized properties of the system. We also show that the bonding of the B-graphene layer to the Co(0001) substrate can be released by intercalation of Li into the interface. This allows the exploration of the doping effect in detail. Finally, our ARPES data indicate a gap opening in the Dirac cone as a result of the highly unbalanced boron concentrations in the two graphene sublattices.

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Fedorov AV, Yashina LV, Vilkov OY, Laubschat C, Vyalikh DV, Usachov DY. Spin-polarized Fermi surface, hole-doping and band gap in graphene with boron impurities. Nanoscale. 2018 Дек. 28;10(48):22810-22817. https://doi.org/10.1039/c8nr08339h