Size confinement effect in graphene grown on 6H-SiC (0 0 0 1) substrate

V. M. Mikoushkin, V. V. Shnitov, A. A. Lebedev, S. P. Lebedev, S. Yu Nikonov, O. Yu Vilkov, T. Iakimov, R. Yakimova

Результат исследований: Научные публикации в периодических изданияхстатья

7 Цитирования (Scopus)

Выдержка

Abstract We have observed the energy structure in the density of occupied states of graphene grown on n-type 6H-SiC (0 0 0 1). The structure revealed with photoelectron spectroscopy is described by creation of the quantum well states whose number and the energy position (E1 = 0.3 eV, E2 = 1.2 eV, E3 = 2.6 eV) coincide with the calculated ones for deep (V = 2.9 eV) and narrow (d = 2.15 Å) quantum well formed by potential relief of the valence bands in the structure graphene/n-SiC. We believe that the quantum well states should be formed also in graphene on dielectric and in suspended graphene.

Язык оригиналаанглийский
Номер статьи9639
Страницы (с-по)139-145
Число страниц7
ЖурналCarbon
Том86
DOI
СостояниеОпубликовано - 2015

Отпечаток

Graphite
Graphene
Semiconductor quantum wells
Substrates
Photoelectron spectroscopy
Valence bands

Предметные области Scopus

  • Химия (все)

Цитировать

Mikoushkin, V. M., Shnitov, V. V., Lebedev, A. A., Lebedev, S. P., Nikonov, S. Y., Vilkov, O. Y., ... Yakimova, R. (2015). Size confinement effect in graphene grown on 6H-SiC (0 0 0 1) substrate. Carbon, 86, 139-145. [9639]. https://doi.org/10.1016/j.carbon.2015.01.015
Mikoushkin, V. M. ; Shnitov, V. V. ; Lebedev, A. A. ; Lebedev, S. P. ; Nikonov, S. Yu ; Vilkov, O. Yu ; Iakimov, T. ; Yakimova, R. / Size confinement effect in graphene grown on 6H-SiC (0 0 0 1) substrate. В: Carbon. 2015 ; Том 86. стр. 139-145.
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abstract = "Abstract We have observed the energy structure in the density of occupied states of graphene grown on n-type 6H-SiC (0 0 0 1). The structure revealed with photoelectron spectroscopy is described by creation of the quantum well states whose number and the energy position (E1 = 0.3 eV, E2 = 1.2 eV, E3 = 2.6 eV) coincide with the calculated ones for deep (V = 2.9 eV) and narrow (d = 2.15 {\AA}) quantum well formed by potential relief of the valence bands in the structure graphene/n-SiC. We believe that the quantum well states should be formed also in graphene on dielectric and in suspended graphene.",
author = "Mikoushkin, {V. M.} and Shnitov, {V. V.} and Lebedev, {A. A.} and Lebedev, {S. P.} and Nikonov, {S. Yu} and Vilkov, {O. Yu} and T. Iakimov and R. Yakimova",
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Mikoushkin, VM, Shnitov, VV, Lebedev, AA, Lebedev, SP, Nikonov, SY, Vilkov, OY, Iakimov, T & Yakimova, R 2015, 'Size confinement effect in graphene grown on 6H-SiC (0 0 0 1) substrate', Carbon, том. 86, 9639, стр. 139-145. https://doi.org/10.1016/j.carbon.2015.01.015

Size confinement effect in graphene grown on 6H-SiC (0 0 0 1) substrate. / Mikoushkin, V. M.; Shnitov, V. V.; Lebedev, A. A.; Lebedev, S. P.; Nikonov, S. Yu; Vilkov, O. Yu; Iakimov, T.; Yakimova, R.

В: Carbon, Том 86, 9639, 2015, стр. 139-145.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - Size confinement effect in graphene grown on 6H-SiC (0 0 0 1) substrate

AU - Mikoushkin, V. M.

AU - Shnitov, V. V.

AU - Lebedev, A. A.

AU - Lebedev, S. P.

AU - Nikonov, S. Yu

AU - Vilkov, O. Yu

AU - Iakimov, T.

AU - Yakimova, R.

PY - 2015

Y1 - 2015

N2 - Abstract We have observed the energy structure in the density of occupied states of graphene grown on n-type 6H-SiC (0 0 0 1). The structure revealed with photoelectron spectroscopy is described by creation of the quantum well states whose number and the energy position (E1 = 0.3 eV, E2 = 1.2 eV, E3 = 2.6 eV) coincide with the calculated ones for deep (V = 2.9 eV) and narrow (d = 2.15 Å) quantum well formed by potential relief of the valence bands in the structure graphene/n-SiC. We believe that the quantum well states should be formed also in graphene on dielectric and in suspended graphene.

AB - Abstract We have observed the energy structure in the density of occupied states of graphene grown on n-type 6H-SiC (0 0 0 1). The structure revealed with photoelectron spectroscopy is described by creation of the quantum well states whose number and the energy position (E1 = 0.3 eV, E2 = 1.2 eV, E3 = 2.6 eV) coincide with the calculated ones for deep (V = 2.9 eV) and narrow (d = 2.15 Å) quantum well formed by potential relief of the valence bands in the structure graphene/n-SiC. We believe that the quantum well states should be formed also in graphene on dielectric and in suspended graphene.

UR - http://www.scopus.com/inward/record.url?scp=84924605236&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2015.01.015

DO - 10.1016/j.carbon.2015.01.015

M3 - Article

AN - SCOPUS:84924605236

VL - 86

SP - 139

EP - 145

JO - Carbon

JF - Carbon

SN - 0008-6223

M1 - 9639

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Mikoushkin VM, Shnitov VV, Lebedev AA, Lebedev SP, Nikonov SY, Vilkov OY и соавт. Size confinement effect in graphene grown on 6H-SiC (0 0 0 1) substrate. Carbon. 2015;86:139-145. 9639. https://doi.org/10.1016/j.carbon.2015.01.015