Scrutinizing Hall Effect in Mn1-xFexSi: Fermi Surface Evolution and Hidden Quantum Criticality

V. V. Glushkov, I. I. Lobanova, V. Yu. Ivanov, V. V. Voronov, V. A. Dyadkin, N. M. Chubova, S. V. Grigoriev, S. V. Demishev

Результат исследований: Научные публикации в периодических изданияхстатья

15 Цитирования (Scopus)

Аннотация

Separating between the ordinary Hall effect and anomalous Hall effect in the paramagnetic phase of Mn1-xFexSi reveals an ordinary Hall effect sign inversion associated with the hidden quantum critical (QC) point x* similar to 0.11. The effective hole doping at intermediate Fe content leads to verifiable predictions in the field of fermiology, magnetic interactions, and QC phenomena in Mn1-xFexSi. The change of electron and hole concentrations is considered as a "driving force" for tuning the QC regime in Mn1-xFexSi via modifying the Ruderman-Kittel-Kasuya-Yosida exchange interaction within the Heisenberg model of magnetism.

Язык оригиналаАнглийский
Номер статьи256601
Число страниц6
ЖурналPhysical Review Letters
Том115
Номер выпуска25
DOI
СостояниеОпубликовано - 18 дек 2015

Предметные области Scopus

  • Физика и астрономия (все)

Цитировать

Glushkov, V. V., Lobanova, I. I., Ivanov, V. Y., Voronov, V. V., Dyadkin, V. A., Chubova, N. M., Grigoriev, S. V., & Demishev, S. V. (2015). Scrutinizing Hall Effect in Mn1-xFexSi: Fermi Surface Evolution and Hidden Quantum Criticality. Physical Review Letters, 115(25), [256601]. https://doi.org/10.1103/PhysRevLett.115.256601