Peculiarity of Electric Properties of Oxygen-Implanted Silicon at Early Precipitation Stages

Denis Danilov, Oleg Vyvenko, Anton Loshachenko, Nikolay Sobolev

Результат исследований: Научные публикации в периодических изданияхстатья

Выдержка

The evolution of the defect structure and electric properties of the oxygen-implanted silicon samples subjected by thermal treatment in the temperature range from 700 to 1100 °C is investigated using transmission electron microscopy (TEM) and space charge spectroscopy. It is established that embedded positive charge of oxygen precipitates (OPs) decreases inversely proportional to their size. This fact gives evidence about localization of the charge in thin nonstoichiometric shell of OP. Annealing at 700 °C results in the formation of nanosized defects and in an inhomogeneous electric structure of the implanted region: the embedded positive charge is localized in the near-surface vacancy-rich part of the implanted region, whereas the strongly compensated layer is formed in self-interstitial-rich deepest part of the implanted region.

Язык оригиналаанглийский
ЖурналPhysica Status Solidi (A) Applications and Materials Science
DOI
СостояниеОпубликовано - 1 янв 2019

Отпечаток

Silicon
Electric properties
Oxygen
Precipitates
precipitates
silicon
oxygen
Defect structures
defects
Electric space charge
Vacancies
space charge
interstitials
Heat treatment
Spectroscopy
Annealing
Transmission electron microscopy
Defects
transmission electron microscopy
annealing

Предметные области Scopus

  • Электроника, оптика и магнитные материалы
  • Физика конденсатов
  • Поверхности и интерфейсы
  • Поверхности, слои и пленки
  • Электротехника и электроника
  • Химия материалов

Цитировать

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abstract = "The evolution of the defect structure and electric properties of the oxygen-implanted silicon samples subjected by thermal treatment in the temperature range from 700 to 1100 °C is investigated using transmission electron microscopy (TEM) and space charge spectroscopy. It is established that embedded positive charge of oxygen precipitates (OPs) decreases inversely proportional to their size. This fact gives evidence about localization of the charge in thin nonstoichiometric shell of OP. Annealing at 700 °C results in the formation of nanosized defects and in an inhomogeneous electric structure of the implanted region: the embedded positive charge is localized in the near-surface vacancy-rich part of the implanted region, whereas the strongly compensated layer is formed in self-interstitial-rich deepest part of the implanted region.",
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author = "Denis Danilov and Oleg Vyvenko and Anton Loshachenko and Nikolay Sobolev",
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Peculiarity of Electric Properties of Oxygen-Implanted Silicon at Early Precipitation Stages. / Danilov, Denis; Vyvenko, Oleg; Loshachenko, Anton; Sobolev, Nikolay.

В: Physica Status Solidi (A) Applications and Materials Science, 01.01.2019.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - Peculiarity of Electric Properties of Oxygen-Implanted Silicon at Early Precipitation Stages

AU - Danilov, Denis

AU - Vyvenko, Oleg

AU - Loshachenko, Anton

AU - Sobolev, Nikolay

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The evolution of the defect structure and electric properties of the oxygen-implanted silicon samples subjected by thermal treatment in the temperature range from 700 to 1100 °C is investigated using transmission electron microscopy (TEM) and space charge spectroscopy. It is established that embedded positive charge of oxygen precipitates (OPs) decreases inversely proportional to their size. This fact gives evidence about localization of the charge in thin nonstoichiometric shell of OP. Annealing at 700 °C results in the formation of nanosized defects and in an inhomogeneous electric structure of the implanted region: the embedded positive charge is localized in the near-surface vacancy-rich part of the implanted region, whereas the strongly compensated layer is formed in self-interstitial-rich deepest part of the implanted region.

AB - The evolution of the defect structure and electric properties of the oxygen-implanted silicon samples subjected by thermal treatment in the temperature range from 700 to 1100 °C is investigated using transmission electron microscopy (TEM) and space charge spectroscopy. It is established that embedded positive charge of oxygen precipitates (OPs) decreases inversely proportional to their size. This fact gives evidence about localization of the charge in thin nonstoichiometric shell of OP. Annealing at 700 °C results in the formation of nanosized defects and in an inhomogeneous electric structure of the implanted region: the embedded positive charge is localized in the near-surface vacancy-rich part of the implanted region, whereas the strongly compensated layer is formed in self-interstitial-rich deepest part of the implanted region.

KW - embedded charge

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