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Optical gap and dc conductivity of disordered materials of (As 2Se3)100-x(SbSI)x type. / Skuban, F.; Lukić, S. R.; Petrović, D. M.; Savić, I.; Tver'yanovich, Yu S.

в: Journal of Optoelectronics and Advanced Materials, Том 7, № 4, 08.2005, стр. 1793-1799.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Skuban, F, Lukić, SR, Petrović, DM, Savić, I & Tver'yanovich, YS 2005, 'Optical gap and dc conductivity of disordered materials of (As 2Se3)100-x(SbSI)x type', Journal of Optoelectronics and Advanced Materials, Том. 7, № 4, стр. 1793-1799.

APA

Skuban, F., Lukić, S. R., Petrović, D. M., Savić, I., & Tver'yanovich, Y. S. (2005). Optical gap and dc conductivity of disordered materials of (As 2Se3)100-x(SbSI)x type. Journal of Optoelectronics and Advanced Materials, 7(4), 1793-1799.

Vancouver

Skuban F, Lukić SR, Petrović DM, Savić I, Tver'yanovich YS. Optical gap and dc conductivity of disordered materials of (As 2Se3)100-x(SbSI)x type. Journal of Optoelectronics and Advanced Materials. 2005 Авг.;7(4):1793-1799.

Author

Skuban, F. ; Lukić, S. R. ; Petrović, D. M. ; Savić, I. ; Tver'yanovich, Yu S. / Optical gap and dc conductivity of disordered materials of (As 2Se3)100-x(SbSI)x type. в: Journal of Optoelectronics and Advanced Materials. 2005 ; Том 7, № 4. стр. 1793-1799.

BibTeX

@article{1e887911241b46a798bf689df99bd956,
title = "Optical gap and dc conductivity of disordered materials of (As 2Se3)100-x(SbSI)x type",
abstract = "The paper presents the results of a study of some electrical and optical properties of the five-component chalcogenide glasses in the quasi-binary (As2Se3)100-x(SbSI)x system. It is a system with the variable ratio of classical amorphous compound As 2Se3 and the molecule of antimony sulfoiodide, SbSI, which in the monocrystal form is characterized as a ferroelectric. The investigated glasses, with various concentration of SbSI, were synthesized from high-purity elemental components by fast cooling from the melt. The amorphous character of the samples was proved using standard optical and X-ray techniques. The temperature dependence of dc conductivity of bulk samples has been investigated in the range from room temperature to the temperature below the glass transition temperature Tg. On the basis of the obtained results, the conductivity activation energy was determined. By studying transparency spectra in a wide range of optical and IR part of the electromagnetic radiation, it was found that the position of the absorption edge depends on the Sb content. Optical band gap and tail-state region were determined.",
keywords = "Chalcogenide glasses, Dc electrical conductivity, Optical band gap",
author = "F. Skuban and Luki{\'c}, {S. R.} and Petrovi{\'c}, {D. M.} and I. Savi{\'c} and Tver'yanovich, {Yu S.}",
year = "2005",
month = aug,
language = "English",
volume = "7",
pages = "1793--1799",
journal = "Journal of Optoelectronics and Advanced Materials",
issn = "1454-4164",
publisher = "National Institute of Optoelectronics",
number = "4",

}

RIS

TY - JOUR

T1 - Optical gap and dc conductivity of disordered materials of (As 2Se3)100-x(SbSI)x type

AU - Skuban, F.

AU - Lukić, S. R.

AU - Petrović, D. M.

AU - Savić, I.

AU - Tver'yanovich, Yu S.

PY - 2005/8

Y1 - 2005/8

N2 - The paper presents the results of a study of some electrical and optical properties of the five-component chalcogenide glasses in the quasi-binary (As2Se3)100-x(SbSI)x system. It is a system with the variable ratio of classical amorphous compound As 2Se3 and the molecule of antimony sulfoiodide, SbSI, which in the monocrystal form is characterized as a ferroelectric. The investigated glasses, with various concentration of SbSI, were synthesized from high-purity elemental components by fast cooling from the melt. The amorphous character of the samples was proved using standard optical and X-ray techniques. The temperature dependence of dc conductivity of bulk samples has been investigated in the range from room temperature to the temperature below the glass transition temperature Tg. On the basis of the obtained results, the conductivity activation energy was determined. By studying transparency spectra in a wide range of optical and IR part of the electromagnetic radiation, it was found that the position of the absorption edge depends on the Sb content. Optical band gap and tail-state region were determined.

AB - The paper presents the results of a study of some electrical and optical properties of the five-component chalcogenide glasses in the quasi-binary (As2Se3)100-x(SbSI)x system. It is a system with the variable ratio of classical amorphous compound As 2Se3 and the molecule of antimony sulfoiodide, SbSI, which in the monocrystal form is characterized as a ferroelectric. The investigated glasses, with various concentration of SbSI, were synthesized from high-purity elemental components by fast cooling from the melt. The amorphous character of the samples was proved using standard optical and X-ray techniques. The temperature dependence of dc conductivity of bulk samples has been investigated in the range from room temperature to the temperature below the glass transition temperature Tg. On the basis of the obtained results, the conductivity activation energy was determined. By studying transparency spectra in a wide range of optical and IR part of the electromagnetic radiation, it was found that the position of the absorption edge depends on the Sb content. Optical band gap and tail-state region were determined.

KW - Chalcogenide glasses

KW - Dc electrical conductivity

KW - Optical band gap

UR - http://www.scopus.com/inward/record.url?scp=24644453937&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:24644453937

VL - 7

SP - 1793

EP - 1799

JO - Journal of Optoelectronics and Advanced Materials

JF - Journal of Optoelectronics and Advanced Materials

SN - 1454-4164

IS - 4

ER -

ID: 61802570