Morphology and the magnetic and conducting properties of heterogeneous layered magnetic structures [(Co45fe45zr10)35(al2o3)65/a-si:H]36

E.A. Yadkina, A.A. Vorobiev, V.A. Ukleev, D. Lott, A.V. Sitnikov, Y.E. Kalinin, O.V. Gerashchenko, S.V. Grigoriev

Результат исследований: Научные публикации в периодических изданияхстатья

6 Цитирования (Scopus)

Выдержка

© Pleiades Publishing, Inc., 2014. The morphology and the magnetic and conducting properties of an amorphous multilayer nano-system [(Co45Fe45Zr10)35(Al2O3)65/a-Si:H]36 consisting of (Co45Fe45Zr10)35(Al2O3)65 magnetic layers and semiconducting hydrogenated amorphous silicon (a-Si:H) layers of various thicknesses have been studied. Using a combination of methods (including polarized neutron reflectometry and grazing incidence small-angle X-ray scattering), it is shown that the magnetic and electrical properties of these multilayer structures are determined by their morphology. It is established that the magnetization and electric resistance of a sam-ple is a nonmonotonic function of the a-Si:H layer thickness. Both characteristics are at a minimum for a structure with a semiconductor layer thickness of 0.4 nm. Samples with silicon layer thicknesses below 0.4 nm represent a three-dimensional structure of Co45Fe45Zr10 grains weakly ordered in space, while in samples with silicon layer thicknesses above 0.4 nm, t
Язык оригиналаанглийский
Страницы (с-по)410-416
ЖурналJournal of Experimental and Theoretical Physics
Номер выпуска3
DOI
СостояниеОпубликовано - 2014

Отпечаток

magnetic properties
conduction
silicon
grazing incidence
laminates
amorphous silicon
incidence
electrical properties
neutrons
magnetization
scattering
x rays

Цитировать

Yadkina, E.A. ; Vorobiev, A.A. ; Ukleev, V.A. ; Lott, D. ; Sitnikov, A.V. ; Kalinin, Y.E. ; Gerashchenko, O.V. ; Grigoriev, S.V. / Morphology and the magnetic and conducting properties of heterogeneous layered magnetic structures [(Co45fe45zr10)35(al2o3)65/a-si:H]36. В: Journal of Experimental and Theoretical Physics. 2014 ; № 3. стр. 410-416.
@article{b45f27adca7c45d7b5aa90a9a7345be1,
title = "Morphology and the magnetic and conducting properties of heterogeneous layered magnetic structures [(Co45fe45zr10)35(al2o3)65/a-si:H]36",
abstract = "{\circledC} Pleiades Publishing, Inc., 2014. The morphology and the magnetic and conducting properties of an amorphous multilayer nano-system [(Co45Fe45Zr10)35(Al2O3)65/a-Si:H]36 consisting of (Co45Fe45Zr10)35(Al2O3)65 magnetic layers and semiconducting hydrogenated amorphous silicon (a-Si:H) layers of various thicknesses have been studied. Using a combination of methods (including polarized neutron reflectometry and grazing incidence small-angle X-ray scattering), it is shown that the magnetic and electrical properties of these multilayer structures are determined by their morphology. It is established that the magnetization and electric resistance of a sam-ple is a nonmonotonic function of the a-Si:H layer thickness. Both characteristics are at a minimum for a structure with a semiconductor layer thickness of 0.4 nm. Samples with silicon layer thicknesses below 0.4 nm represent a three-dimensional structure of Co45Fe45Zr10 grains weakly ordered in space, while in samples with silicon layer thicknesses above 0.4 nm, t",
author = "E.A. Yadkina and A.A. Vorobiev and V.A. Ukleev and D. Lott and A.V. Sitnikov and Y.E. Kalinin and O.V. Gerashchenko and S.V. Grigoriev",
year = "2014",
doi = "10.1134/S1063776114020083",
language = "English",
pages = "410--416",
journal = "Journal of Experimental and Theoretical Physics",
issn = "1063-7761",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "3",

}

Morphology and the magnetic and conducting properties of heterogeneous layered magnetic structures [(Co45fe45zr10)35(al2o3)65/a-si:H]36. / Yadkina, E.A.; Vorobiev, A.A.; Ukleev, V.A.; Lott, D.; Sitnikov, A.V.; Kalinin, Y.E.; Gerashchenko, O.V.; Grigoriev, S.V.

В: Journal of Experimental and Theoretical Physics, № 3, 2014, стр. 410-416.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - Morphology and the magnetic and conducting properties of heterogeneous layered magnetic structures [(Co45fe45zr10)35(al2o3)65/a-si:H]36

AU - Yadkina, E.A.

AU - Vorobiev, A.A.

AU - Ukleev, V.A.

AU - Lott, D.

AU - Sitnikov, A.V.

AU - Kalinin, Y.E.

AU - Gerashchenko, O.V.

AU - Grigoriev, S.V.

PY - 2014

Y1 - 2014

N2 - © Pleiades Publishing, Inc., 2014. The morphology and the magnetic and conducting properties of an amorphous multilayer nano-system [(Co45Fe45Zr10)35(Al2O3)65/a-Si:H]36 consisting of (Co45Fe45Zr10)35(Al2O3)65 magnetic layers and semiconducting hydrogenated amorphous silicon (a-Si:H) layers of various thicknesses have been studied. Using a combination of methods (including polarized neutron reflectometry and grazing incidence small-angle X-ray scattering), it is shown that the magnetic and electrical properties of these multilayer structures are determined by their morphology. It is established that the magnetization and electric resistance of a sam-ple is a nonmonotonic function of the a-Si:H layer thickness. Both characteristics are at a minimum for a structure with a semiconductor layer thickness of 0.4 nm. Samples with silicon layer thicknesses below 0.4 nm represent a three-dimensional structure of Co45Fe45Zr10 grains weakly ordered in space, while in samples with silicon layer thicknesses above 0.4 nm, t

AB - © Pleiades Publishing, Inc., 2014. The morphology and the magnetic and conducting properties of an amorphous multilayer nano-system [(Co45Fe45Zr10)35(Al2O3)65/a-Si:H]36 consisting of (Co45Fe45Zr10)35(Al2O3)65 magnetic layers and semiconducting hydrogenated amorphous silicon (a-Si:H) layers of various thicknesses have been studied. Using a combination of methods (including polarized neutron reflectometry and grazing incidence small-angle X-ray scattering), it is shown that the magnetic and electrical properties of these multilayer structures are determined by their morphology. It is established that the magnetization and electric resistance of a sam-ple is a nonmonotonic function of the a-Si:H layer thickness. Both characteristics are at a minimum for a structure with a semiconductor layer thickness of 0.4 nm. Samples with silicon layer thicknesses below 0.4 nm represent a three-dimensional structure of Co45Fe45Zr10 grains weakly ordered in space, while in samples with silicon layer thicknesses above 0.4 nm, t

U2 - 10.1134/S1063776114020083

DO - 10.1134/S1063776114020083

M3 - Article

SP - 410

EP - 416

JO - Journal of Experimental and Theoretical Physics

JF - Journal of Experimental and Theoretical Physics

SN - 1063-7761

IS - 3

ER -