TY - JOUR

T1 - Modeling the Radial Growth of Self-Catalyzed III-V Nanowires

AU - Dubrovskii, Vladimir G.

AU - Leshchenko, Egor D.

N1 - Dubrovskii, V.G.; Leshchenko, E.D. Modeling the Radial Growth of Self-Catalyzed III-V Nanowires. Nanomaterials 2022, 12, 1698. https://doi.org/10.3390/nano12101698

PY - 2022/5/16

Y1 - 2022/5/16

N2 - A new model for the radial growth of self-catalyzed III-V nanowires on different substrates is presented, which describes the nanowire morphological evolution without any free parameters. The model takes into account the re-emission of group III atoms from a mask surface and the shadowing effect in directional deposition techniques such as molecular beam epitaxy. It is shown that radial growth is faster for larger pitches of regular nanowire arrays or lower surface density, and can be suppressed by increasing the V/III flux ratio or decreasing re-emission. The model describes quite well the data on the morphological evolution of Ga-catalyzed GaP and GaAs nanowires on different substrates, where the nanowire length increases linearly and the radius enlarges sub-linearly with time. The obtained analytical expressions and numerical data should be useful for morphological control over different III-V nanowires in a wide range of growth conditions.

AB - A new model for the radial growth of self-catalyzed III-V nanowires on different substrates is presented, which describes the nanowire morphological evolution without any free parameters. The model takes into account the re-emission of group III atoms from a mask surface and the shadowing effect in directional deposition techniques such as molecular beam epitaxy. It is shown that radial growth is faster for larger pitches of regular nanowire arrays or lower surface density, and can be suppressed by increasing the V/III flux ratio or decreasing re-emission. The model describes quite well the data on the morphological evolution of Ga-catalyzed GaP and GaAs nanowires on different substrates, where the nanowire length increases linearly and the radius enlarges sub-linearly with time. The obtained analytical expressions and numerical data should be useful for morphological control over different III-V nanowires in a wide range of growth conditions.

KW - Modeling

KW - Molecular beam epitaxy

KW - Radial growth

KW - Self-catalyzed III-V nanowires

UR - http://www.scopus.com/inward/record.url?scp=85132547822&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/7461c0c3-2297-3ace-9b88-8e83f83ffb5b/

U2 - 10.3390/nano12101698

DO - 10.3390/nano12101698

M3 - Article

C2 - 35630920

AN - SCOPUS:85132547822

VL - 12

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 10

M1 - 1698

ER -