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METALLIZATSIYA KHAL'KOGENIDNYKH RASPLAVOV I EE CVAZ' SO STEKLOOBRAZOVANIEM. / Tveryanovich, Yu S.; Borisova, Z. U.; Funtikov, V. A.

в: Neorganiceskie materialy, Том 22, № 9, 01.09.1986, стр. 1546-1551.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Tveryanovich, YS, Borisova, ZU & Funtikov, VA 1986, 'METALLIZATSIYA KHAL'KOGENIDNYKH RASPLAVOV I EE CVAZ' SO STEKLOOBRAZOVANIEM.', Neorganiceskie materialy, Том. 22, № 9, стр. 1546-1551.

APA

Tveryanovich, Y. S., Borisova, Z. U., & Funtikov, V. A. (1986). METALLIZATSIYA KHAL'KOGENIDNYKH RASPLAVOV I EE CVAZ' SO STEKLOOBRAZOVANIEM. Neorganiceskie materialy, 22(9), 1546-1551.

Vancouver

Tveryanovich YS, Borisova ZU, Funtikov VA. METALLIZATSIYA KHAL'KOGENIDNYKH RASPLAVOV I EE CVAZ' SO STEKLOOBRAZOVANIEM. Neorganiceskie materialy. 1986 Сент. 1;22(9):1546-1551.

Author

Tveryanovich, Yu S. ; Borisova, Z. U. ; Funtikov, V. A. / METALLIZATSIYA KHAL'KOGENIDNYKH RASPLAVOV I EE CVAZ' SO STEKLOOBRAZOVANIEM. в: Neorganiceskie materialy. 1986 ; Том 22, № 9. стр. 1546-1551.

BibTeX

@article{b411206b2b0d4686933f1d8b670ff779,
title = "METALLIZATSIYA KHAL'KOGENIDNYKH RASPLAVOV I EE CVAZ' SO STEKLOOBRAZOVANIEM.",
abstract = "The destruction of the network of covalent bonds of a chalcogenide melt, which causes a transition from semiconductor to metallic conductivity, may be described from a unified standpoint in the case of both high-resistivity and low-resistivity melts. Metallization of chalcogenide melts limits the range of glass formation with respect to the component concentrations and the structural-transition temperature. The use of high rates of cooling from various temperatures of melts in which a semiconductor-metal transition occurs with an increase in temperature makes it possible to obtain a given material both in the form of semiconducting glass and in the form of amorphous metal.",
author = "Tveryanovich, {Yu S.} and Borisova, {Z. U.} and Funtikov, {V. A.}",
year = "1986",
month = sep,
day = "1",
language = "русский",
volume = "22",
pages = "1546--1551",
journal = "НЕОРГАНИЧЕСКИЕ МАТЕРИАЛЫ",
issn = "0002-337X",
publisher = "Издательство {"}Наука{"}",
number = "9",

}

RIS

TY - JOUR

T1 - METALLIZATSIYA KHAL'KOGENIDNYKH RASPLAVOV I EE CVAZ' SO STEKLOOBRAZOVANIEM.

AU - Tveryanovich, Yu S.

AU - Borisova, Z. U.

AU - Funtikov, V. A.

PY - 1986/9/1

Y1 - 1986/9/1

N2 - The destruction of the network of covalent bonds of a chalcogenide melt, which causes a transition from semiconductor to metallic conductivity, may be described from a unified standpoint in the case of both high-resistivity and low-resistivity melts. Metallization of chalcogenide melts limits the range of glass formation with respect to the component concentrations and the structural-transition temperature. The use of high rates of cooling from various temperatures of melts in which a semiconductor-metal transition occurs with an increase in temperature makes it possible to obtain a given material both in the form of semiconducting glass and in the form of amorphous metal.

AB - The destruction of the network of covalent bonds of a chalcogenide melt, which causes a transition from semiconductor to metallic conductivity, may be described from a unified standpoint in the case of both high-resistivity and low-resistivity melts. Metallization of chalcogenide melts limits the range of glass formation with respect to the component concentrations and the structural-transition temperature. The use of high rates of cooling from various temperatures of melts in which a semiconductor-metal transition occurs with an increase in temperature makes it possible to obtain a given material both in the form of semiconducting glass and in the form of amorphous metal.

UR - http://www.scopus.com/inward/record.url?scp=0022781173&partnerID=8YFLogxK

M3 - статья

AN - SCOPUS:0022781173

VL - 22

SP - 1546

EP - 1551

JO - НЕОРГАНИЧЕСКИЕ МАТЕРИАЛЫ

JF - НЕОРГАНИЧЕСКИЕ МАТЕРИАЛЫ

SN - 0002-337X

IS - 9

ER -

ID: 43158268