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Low-frequency resonant Raman scattering observation in quantum wells grown on pre-patterned substrate. / Davydov, V.G.; Morozova, P.A.; Kapitonov, Yu.V.; Kozhaev, M.A.; Petrov, V.V.; Dolgikh, Yu.K.; Eliseev, S.A.; Efimov, Yu.P.; Gaisin, V.A.
NANOSTRUCTURES: PHYSICS AND TECHNOLOGY 20th International Symposium Proceedings. САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ АКАДЕМИЧЕСКИЙ УНИВЕРСИТЕТ РОССИЙСКОЙ АКАДЕМИИ НАУК, 2012. стр. 193.
Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике › научная
Harvard
Davydov, VG, Morozova, PA, Kapitonov, YV, Kozhaev, MA, Petrov, VV, Dolgikh, YK, Eliseev, SA, Efimov, YP & Gaisin, VA 2012,
Low-frequency resonant Raman scattering observation in quantum wells grown on pre-patterned substrate. в
NANOSTRUCTURES: PHYSICS AND TECHNOLOGY 20th International Symposium Proceedings. САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ АКАДЕМИЧЕСКИЙ УНИВЕРСИТЕТ РОССИЙСКОЙ АКАДЕМИИ НАУК, стр. 193. <
http://www.ioffe.ru/NANO2012>
APA
Davydov, V. G., Morozova, P. A., Kapitonov, Y. V., Kozhaev, M. A., Petrov, V. V., Dolgikh, Y. K., Eliseev, S. A., Efimov, Y. P., & Gaisin, V. A. (2012).
Low-frequency resonant Raman scattering observation in quantum wells grown on pre-patterned substrate. в
NANOSTRUCTURES: PHYSICS AND TECHNOLOGY 20th International Symposium Proceedings (стр. 193). САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ АКАДЕМИЧЕСКИЙ УНИВЕРСИТЕТ РОССИЙСКОЙ АКАДЕМИИ НАУК.
http://www.ioffe.ru/NANO2012
Vancouver
Author
Davydov, V.G. ; Morozova, P.A. ; Kapitonov, Yu.V. ; Kozhaev, M.A. ; Petrov, V.V. ; Dolgikh, Yu.K. ; Eliseev, S.A. ; Efimov, Yu.P. ; Gaisin, V.A. /
Low-frequency resonant Raman scattering observation in quantum wells grown on pre-patterned substrate. NANOSTRUCTURES: PHYSICS AND TECHNOLOGY 20th International Symposium Proceedings. САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ АКАДЕМИЧЕСКИЙ УНИВЕРСИТЕТ РОССИЙСКОЙ АКАДЕМИИ НАУК, 2012. стр. 193
BibTeX
@inbook{edb79efd068f4f1daad96801535265a5,
title = "Low-frequency resonant Raman scattering observation in quantum wells grown on pre-patterned substrate",
abstract = "Two nominally identical heterostructures with InGaAs/GaAs quantum wells were grown on the different GaAs substrates: fresh “epi-ready” one and another subjected to the electron and ion beams irradiation before growth. Resonant photoluminescence and photoluminescence excitation spectra were recorded. Scattered excitation light was strongly suppressed by geometric means. Very low frequency Raman lines were clearly observed in the second structure only. Their physical nature is discussed.",
author = "V.G. Davydov and P.A. Morozova and Yu.V. Kapitonov and M.A. Kozhaev and V.V. Petrov and Yu.K. Dolgikh and S.A. Eliseev and Yu.P. Efimov and V.A. Gaisin",
year = "2012",
language = "не определен",
isbn = "978-5-91326-179-3",
pages = "193",
booktitle = "NANOSTRUCTURES: PHYSICS AND TECHNOLOGY 20th International Symposium Proceedings",
publisher = "САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ АКАДЕМИЧЕСКИЙ УНИВЕРСИТЕТ РОССИЙСКОЙ АКАДЕМИИ НАУК",
address = "Российская Федерация",
}
RIS
TY - CHAP
T1 - Low-frequency resonant Raman scattering observation in quantum wells grown on pre-patterned substrate
AU - Davydov, V.G.
AU - Morozova, P.A.
AU - Kapitonov, Yu.V.
AU - Kozhaev, M.A.
AU - Petrov, V.V.
AU - Dolgikh, Yu.K.
AU - Eliseev, S.A.
AU - Efimov, Yu.P.
AU - Gaisin, V.A.
PY - 2012
Y1 - 2012
N2 - Two nominally identical heterostructures with InGaAs/GaAs quantum wells were grown on the different GaAs substrates: fresh “epi-ready” one and another subjected to the electron and ion beams irradiation before growth. Resonant photoluminescence and photoluminescence excitation spectra were recorded. Scattered excitation light was strongly suppressed by geometric means. Very low frequency Raman lines were clearly observed in the second structure only. Their
physical nature is discussed.
AB - Two nominally identical heterostructures with InGaAs/GaAs quantum wells were grown on the different GaAs substrates: fresh “epi-ready” one and another subjected to the electron and ion beams irradiation before growth. Resonant photoluminescence and photoluminescence excitation spectra were recorded. Scattered excitation light was strongly suppressed by geometric means. Very low frequency Raman lines were clearly observed in the second structure only. Their
physical nature is discussed.
M3 - статья в сборнике
SN - 978-5-91326-179-3
SP - 193
BT - NANOSTRUCTURES: PHYSICS AND TECHNOLOGY 20th International Symposium Proceedings
PB - САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ АКАДЕМИЧЕСКИЙ УНИВЕРСИТЕТ РОССИЙСКОЙ АКАДЕМИИ НАУК
ER -