Low-temperature in-induced holes formation in native-SiOx/Si(111) substrates for self-catalyzed MBE gROWTH of GaAs nanowires

Rodion R. Reznik, Konstantin P. Kotlyar, Vladislav O. Gridchin, Evgeniy V. Ubyivovk, Vladimir V. Federov, Artem I. Khrebtov, Dmitrii S. Shevchuk, George E. Cirlin

Результат исследований: Научные публикации в периодических изданияхстатья

Аннотация

The reduction of substrate temperature is important in view of the integration of III-V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiOx layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires.

Язык оригиналаанглийский
Номер статьи3449
ЖурналMaterials
Том13
Номер выпуска16
DOI
СостояниеОпубликовано - авг 2020

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