Large-Scale Sublattice Asymmetry in Pure and Boron-Doped Graphene

Dmitry Yu. Usachov, Alexander V. Fedorov, Oleg Yu. Vilkov, Anatoly E. Petukhov, Artem G. Rybkin, Arthur Ernst, Mikhail M. Otrokov, Evgueni V. Chulkov, Ilya I. Ogorodnikov, Mikhail V. Kuznetsov, Lada V. Yashina, Elmar Yu. Kataev, Anna V. Erofeevskaya, Vladimir Yu. Voroshnin, Vera K. Adamchuk, Clemens Laubschat, Denis V. Vyalikh

Результат исследований: Научные публикации в периодических изданияхстатья

26 Цитирования (Scopus)

Выдержка

The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reproducible and processing compatible manner are very limited at the moment. A promising approach for the graphene band gap engineering is to introduce a large-scale sublattice asymmetry. Using photoelectron diffraction and spectroscopy we have demonstrated a selective incorporation of boron impurities into only one of the two graphene sublattices. We have shown that in the well-oriented graphene on the Co(0001) surface the carbon atoms occupy two nonequivalent positions with respect to the Co lattice, namely top and hollow sites. Boron impurities embedded into the graphene lattice preferably occupy the hollow sites due to a site-specific interaction with the Co pattern. Our theoretical calculations predict that such boron-doped graphene possesses a band gap that can be precisely controlled by the dopant concentration. B-graphene with doping asymmetry is, thus, a novel material, which is worth considering as a good candidate for electronic applications.

Язык оригиналаАнглийский
Страницы (с-по)4535-4543
Число страниц9
ЖурналNano Letters
Том16
Номер выпуска7
DOI
СостояниеОпубликовано - июл 2016

Отпечаток

Boron
Graphite
Graphene
sublattices
graphene
boron
asymmetry
Energy gap
hollow
Doping (additives)
Impurities
impurities
Photoelectrons
electronics
Electronic structure
photoelectrons
Electronic equipment
Carbon
Diffraction
Spectroscopy

Цитировать

Usachov, Dmitry Yu. ; Fedorov, Alexander V. ; Vilkov, Oleg Yu. ; Petukhov, Anatoly E. ; Rybkin, Artem G. ; Ernst, Arthur ; Otrokov, Mikhail M. ; Chulkov, Evgueni V. ; Ogorodnikov, Ilya I. ; Kuznetsov, Mikhail V. ; Yashina, Lada V. ; Kataev, Elmar Yu. ; Erofeevskaya, Anna V. ; Voroshnin, Vladimir Yu. ; Adamchuk, Vera K. ; Laubschat, Clemens ; Vyalikh, Denis V. / Large-Scale Sublattice Asymmetry in Pure and Boron-Doped Graphene. В: Nano Letters. 2016 ; Том 16, № 7. стр. 4535-4543.
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abstract = "The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reproducible and processing compatible manner are very limited at the moment. A promising approach for the graphene band gap engineering is to introduce a large-scale sublattice asymmetry. Using photoelectron diffraction and spectroscopy we have demonstrated a selective incorporation of boron impurities into only one of the two graphene sublattices. We have shown that in the well-oriented graphene on the Co(0001) surface the carbon atoms occupy two nonequivalent positions with respect to the Co lattice, namely top and hollow sites. Boron impurities embedded into the graphene lattice preferably occupy the hollow sites due to a site-specific interaction with the Co pattern. Our theoretical calculations predict that such boron-doped graphene possesses a band gap that can be precisely controlled by the dopant concentration. B-graphene with doping asymmetry is, thus, a novel material, which is worth considering as a good candidate for electronic applications.",
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author = "Usachov, {Dmitry Yu.} and Fedorov, {Alexander V.} and Vilkov, {Oleg Yu.} and Petukhov, {Anatoly E.} and Rybkin, {Artem G.} and Arthur Ernst and Otrokov, {Mikhail M.} and Chulkov, {Evgueni V.} and Ogorodnikov, {Ilya I.} and Kuznetsov, {Mikhail V.} and Yashina, {Lada V.} and Kataev, {Elmar Yu.} and Erofeevskaya, {Anna V.} and Voroshnin, {Vladimir Yu.} and Adamchuk, {Vera K.} and Clemens Laubschat and Vyalikh, {Denis V.}",
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Usachov, DY, Fedorov, AV, Vilkov, OY, Petukhov, AE, Rybkin, AG, Ernst, A, Otrokov, MM, Chulkov, EV, Ogorodnikov, II, Kuznetsov, MV, Yashina, LV, Kataev, EY, Erofeevskaya, AV, Voroshnin, VY, Adamchuk, VK, Laubschat, C & Vyalikh, DV 2016, 'Large-Scale Sublattice Asymmetry in Pure and Boron-Doped Graphene', Nano Letters, том. 16, № 7, стр. 4535-4543. https://doi.org/10.1021/acs.nanolett.6b01795, https://doi.org/10.1021/acs.nanolett.6b01795

Large-Scale Sublattice Asymmetry in Pure and Boron-Doped Graphene. / Usachov, Dmitry Yu.; Fedorov, Alexander V.; Vilkov, Oleg Yu.; Petukhov, Anatoly E.; Rybkin, Artem G.; Ernst, Arthur; Otrokov, Mikhail M.; Chulkov, Evgueni V.; Ogorodnikov, Ilya I.; Kuznetsov, Mikhail V.; Yashina, Lada V.; Kataev, Elmar Yu.; Erofeevskaya, Anna V.; Voroshnin, Vladimir Yu.; Adamchuk, Vera K.; Laubschat, Clemens; Vyalikh, Denis V.

В: Nano Letters, Том 16, № 7, 07.2016, стр. 4535-4543.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - Large-Scale Sublattice Asymmetry in Pure and Boron-Doped Graphene

AU - Usachov, Dmitry Yu.

AU - Fedorov, Alexander V.

AU - Vilkov, Oleg Yu.

AU - Petukhov, Anatoly E.

AU - Rybkin, Artem G.

AU - Ernst, Arthur

AU - Otrokov, Mikhail M.

AU - Chulkov, Evgueni V.

AU - Ogorodnikov, Ilya I.

AU - Kuznetsov, Mikhail V.

AU - Yashina, Lada V.

AU - Kataev, Elmar Yu.

AU - Erofeevskaya, Anna V.

AU - Voroshnin, Vladimir Yu.

AU - Adamchuk, Vera K.

AU - Laubschat, Clemens

AU - Vyalikh, Denis V.

PY - 2016/7

Y1 - 2016/7

N2 - The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reproducible and processing compatible manner are very limited at the moment. A promising approach for the graphene band gap engineering is to introduce a large-scale sublattice asymmetry. Using photoelectron diffraction and spectroscopy we have demonstrated a selective incorporation of boron impurities into only one of the two graphene sublattices. We have shown that in the well-oriented graphene on the Co(0001) surface the carbon atoms occupy two nonequivalent positions with respect to the Co lattice, namely top and hollow sites. Boron impurities embedded into the graphene lattice preferably occupy the hollow sites due to a site-specific interaction with the Co pattern. Our theoretical calculations predict that such boron-doped graphene possesses a band gap that can be precisely controlled by the dopant concentration. B-graphene with doping asymmetry is, thus, a novel material, which is worth considering as a good candidate for electronic applications.

AB - The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reproducible and processing compatible manner are very limited at the moment. A promising approach for the graphene band gap engineering is to introduce a large-scale sublattice asymmetry. Using photoelectron diffraction and spectroscopy we have demonstrated a selective incorporation of boron impurities into only one of the two graphene sublattices. We have shown that in the well-oriented graphene on the Co(0001) surface the carbon atoms occupy two nonequivalent positions with respect to the Co lattice, namely top and hollow sites. Boron impurities embedded into the graphene lattice preferably occupy the hollow sites due to a site-specific interaction with the Co pattern. Our theoretical calculations predict that such boron-doped graphene possesses a band gap that can be precisely controlled by the dopant concentration. B-graphene with doping asymmetry is, thus, a novel material, which is worth considering as a good candidate for electronic applications.

KW - Graphene

KW - boron

KW - doping

KW - sublattice asymmetry

KW - electronic structure

KW - photoemission spectroscopy

KW - FIELD-EFFECT TRANSISTORS

KW - MONOLAYER GRAPHITE

KW - ATOMIC-STRUCTURE

KW - NI(111)

KW - TRANSPORT

KW - SURFACE

KW - ENERGY

KW - APPROXIMATION

KW - NITROGEN

KW - GROWTH

U2 - 10.1021/acs.nanolett.6b01795

DO - 10.1021/acs.nanolett.6b01795

M3 - статья

VL - 16

SP - 4535

EP - 4543

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 7

ER -