Investigation of direct water photoelectrolysis process using III-N structures

Alexander Usikov, Alexey Nikiforov, Oleg Khait, Oleg Medvedev, Ivan Ermakov, Boris Papchenko, Mike Puzyk, Andrei Antipov, Barash Iosif, Sergey Kurin, Alexander Roenkov, Heikki Helava, Yuri Makarov

Результат исследований: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференции

Выдержка

GaN, GaN/AlGaN and GaN/InGaN-based structures were used to study water photoelectrolysis in KOH-based electrolyte, measurement of current-potential characteristics, investigation of electrode corrosion and for hydrogen generation. The corrosion process of p-n AlGaN/GaN structure starts in the p-layers, spreads via vertical channels associated with threading defects, and continues laterally along the n-layers, where large local hollows and voids were observed. The H2 production rate of 0.3-0.6 ml/cm2×h was measured for n-GaN structure.

Язык оригиналаанглийский
Название основной публикацииSilicon Carbide and Related Materials 2016
РедакторыNikolaos Frangis, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Konstantinos Zekentes
ИздательTrans Tech Publications Ltd
Страницы723-726
Число страниц4
ISBN (печатное издание)9783035710434
DOI
СостояниеОпубликовано - 1 янв 2017
Событие11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, Греция
Продолжительность: 25 сен 201629 сен 2016

Серия публикаций

НазваниеMaterials Science Forum
Том897 MSF
ISSN (печатное издание)0255-5476

Конференция

Конференция11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
СтранаГреция
ГородHalkidiki
Период25/09/1629/09/16

Отпечаток

corrosion
Corrosion
Water
water
Electrolytes
voids
Hydrogen
hollow
electrolytes
Defects
Electrodes
electrodes
defects
hydrogen
aluminum gallium nitride

Предметные области Scopus

  • Материаловедение (все)
  • Физика конденсатов
  • Сопротивление материалов
  • Общее машиностроение

Цитировать

Usikov, A., Nikiforov, A., Khait, O., Medvedev, O., Ermakov, I., Papchenko, B., ... Makarov, Y. (2017). Investigation of direct water photoelectrolysis process using III-N structures. В N. Frangis, K. Zekentes, K. V. Vasilevskiy, & K. Zekentes (Ред.), Silicon Carbide and Related Materials 2016 (стр. 723-726). (Materials Science Forum; Том 897 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.897.723
Usikov, Alexander ; Nikiforov, Alexey ; Khait, Oleg ; Medvedev, Oleg ; Ermakov, Ivan ; Papchenko, Boris ; Puzyk, Mike ; Antipov, Andrei ; Iosif, Barash ; Kurin, Sergey ; Roenkov, Alexander ; Helava, Heikki ; Makarov, Yuri. / Investigation of direct water photoelectrolysis process using III-N structures. Silicon Carbide and Related Materials 2016. редактор / Nikolaos Frangis ; Konstantinos Zekentes ; Konstantin V. Vasilevskiy ; Konstantinos Zekentes. Trans Tech Publications Ltd, 2017. стр. 723-726 (Materials Science Forum).
@inproceedings{f7f85a8ecc814dd891ba24600fb1b431,
title = "Investigation of direct water photoelectrolysis process using III-N structures",
abstract = "GaN, GaN/AlGaN and GaN/InGaN-based structures were used to study water photoelectrolysis in KOH-based electrolyte, measurement of current-potential characteristics, investigation of electrode corrosion and for hydrogen generation. The corrosion process of p-n AlGaN/GaN structure starts in the p-layers, spreads via vertical channels associated with threading defects, and continues laterally along the n-layers, where large local hollows and voids were observed. The H2 production rate of 0.3-0.6 ml/cm2×h was measured for n-GaN structure.",
keywords = "Hydride vapor phase epitaxy, III-N Structures, Photo-Assisted electrochemical process",
author = "Alexander Usikov and Alexey Nikiforov and Oleg Khait and Oleg Medvedev and Ivan Ermakov and Boris Papchenko and Mike Puzyk and Andrei Antipov and Barash Iosif and Sergey Kurin and Alexander Roenkov and Heikki Helava and Yuri Makarov",
year = "2017",
month = "1",
day = "1",
doi = "10.4028/www.scientific.net/MSF.897.723",
language = "English",
isbn = "9783035710434",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "723--726",
editor = "Nikolaos Frangis and Konstantinos Zekentes and Vasilevskiy, {Konstantin V.} and Konstantinos Zekentes",
booktitle = "Silicon Carbide and Related Materials 2016",
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}

Usikov, A, Nikiforov, A, Khait, O, Medvedev, O, Ermakov, I, Papchenko, B, Puzyk, M, Antipov, A, Iosif, B, Kurin, S, Roenkov, A, Helava, H & Makarov, Y 2017, Investigation of direct water photoelectrolysis process using III-N structures. в N Frangis, K Zekentes, KV Vasilevskiy & K Zekentes (ред.), Silicon Carbide and Related Materials 2016. Materials Science Forum, том. 897 MSF, Trans Tech Publications Ltd, стр. 723-726, Halkidiki, Греция, 25/09/16. https://doi.org/10.4028/www.scientific.net/MSF.897.723

Investigation of direct water photoelectrolysis process using III-N structures. / Usikov, Alexander; Nikiforov, Alexey; Khait, Oleg; Medvedev, Oleg; Ermakov, Ivan; Papchenko, Boris; Puzyk, Mike; Antipov, Andrei; Iosif, Barash; Kurin, Sergey; Roenkov, Alexander; Helava, Heikki; Makarov, Yuri.

Silicon Carbide and Related Materials 2016. ред. / Nikolaos Frangis; Konstantinos Zekentes; Konstantin V. Vasilevskiy; Konstantinos Zekentes. Trans Tech Publications Ltd, 2017. стр. 723-726 (Materials Science Forum; Том 897 MSF).

Результат исследований: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференции

TY - GEN

T1 - Investigation of direct water photoelectrolysis process using III-N structures

AU - Usikov, Alexander

AU - Nikiforov, Alexey

AU - Khait, Oleg

AU - Medvedev, Oleg

AU - Ermakov, Ivan

AU - Papchenko, Boris

AU - Puzyk, Mike

AU - Antipov, Andrei

AU - Iosif, Barash

AU - Kurin, Sergey

AU - Roenkov, Alexander

AU - Helava, Heikki

AU - Makarov, Yuri

PY - 2017/1/1

Y1 - 2017/1/1

N2 - GaN, GaN/AlGaN and GaN/InGaN-based structures were used to study water photoelectrolysis in KOH-based electrolyte, measurement of current-potential characteristics, investigation of electrode corrosion and for hydrogen generation. The corrosion process of p-n AlGaN/GaN structure starts in the p-layers, spreads via vertical channels associated with threading defects, and continues laterally along the n-layers, where large local hollows and voids were observed. The H2 production rate of 0.3-0.6 ml/cm2×h was measured for n-GaN structure.

AB - GaN, GaN/AlGaN and GaN/InGaN-based structures were used to study water photoelectrolysis in KOH-based electrolyte, measurement of current-potential characteristics, investigation of electrode corrosion and for hydrogen generation. The corrosion process of p-n AlGaN/GaN structure starts in the p-layers, spreads via vertical channels associated with threading defects, and continues laterally along the n-layers, where large local hollows and voids were observed. The H2 production rate of 0.3-0.6 ml/cm2×h was measured for n-GaN structure.

KW - Hydride vapor phase epitaxy

KW - III-N Structures

KW - Photo-Assisted electrochemical process

UR - http://www.scopus.com/inward/record.url?scp=85020027986&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.897.723

DO - 10.4028/www.scientific.net/MSF.897.723

M3 - Conference contribution

AN - SCOPUS:85020027986

SN - 9783035710434

T3 - Materials Science Forum

SP - 723

EP - 726

BT - Silicon Carbide and Related Materials 2016

A2 - Frangis, Nikolaos

A2 - Zekentes, Konstantinos

A2 - Vasilevskiy, Konstantin V.

A2 - Zekentes, Konstantinos

PB - Trans Tech Publications Ltd

ER -

Usikov A, Nikiforov A, Khait O, Medvedev O, Ermakov I, Papchenko B и соавт. Investigation of direct water photoelectrolysis process using III-N structures. В Frangis N, Zekentes K, Vasilevskiy KV, Zekentes K, редакторы, Silicon Carbide and Related Materials 2016. Trans Tech Publications Ltd. 2017. стр. 723-726. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.897.723