Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN

O. Medvedev, O. Vyvenko, E. Ubyivovk, S. Shapenkov, A. Bondarenko, P. Saring, M. Seibt

Результат исследований: Научные публикации в периодических изданияхстатьянаучнаярецензирование

8 Цитирования (Scopus)

Выдержка

Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A strong luminescence of straight segments of a-screw dislocations was observed in the temperature range of 70-420K. The spectrum of dislocation related luminescence (DRL) consisted of a doublet of narrow lines red shifted by about 0.3 eV with respect to the band gap. TEM revealed dissociated character of the screw dislocations and the formation of extended nodes at their intersection. From the analysis of the DRL spectral doublet temperature, power and strain dependences DRL was ascribed to direct and indirect excitons bound by 1D quantum wells formed by partials and stacking fault (SF) ribbon of dissociated screw dislocation. Published by AIP Publishing.

Язык оригиналаАнглийский
Номер статьи161427
Число страниц10
ЖурналJournal of Applied Physics
Том123
Номер выпуска16
DOI
СостояниеОпубликовано - 28 апр 2018
Событие29th International Conference on Defects in Semiconductors - Matsue, Япония
Продолжительность: 30 июл 20173 авг 2017
Номер конференции: 29
http://www.icds2017.org/

Предметные области Scopus

  • Физика и астрономия (все)

Цитировать

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abstract = "Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A strong luminescence of straight segments of a-screw dislocations was observed in the temperature range of 70-420K. The spectrum of dislocation related luminescence (DRL) consisted of a doublet of narrow lines red shifted by about 0.3 eV with respect to the band gap. TEM revealed dissociated character of the screw dislocations and the formation of extended nodes at their intersection. From the analysis of the DRL spectral doublet temperature, power and strain dependences DRL was ascribed to direct and indirect excitons bound by 1D quantum wells formed by partials and stacking fault (SF) ribbon of dissociated screw dislocation. Published by AIP Publishing.",
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Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN. / Medvedev, O.; Vyvenko, O.; Ubyivovk, E.; Shapenkov, S.; Bondarenko, A.; Saring, P.; Seibt, M.

В: Journal of Applied Physics, Том 123, № 16, 161427, 28.04.2018.

Результат исследований: Научные публикации в периодических изданияхстатьянаучнаярецензирование

TY - JOUR

T1 - Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN

AU - Medvedev, O.

AU - Vyvenko, O.

AU - Ubyivovk, E.

AU - Shapenkov, S.

AU - Bondarenko, A.

AU - Saring, P.

AU - Seibt, M.

PY - 2018/4/28

Y1 - 2018/4/28

N2 - Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A strong luminescence of straight segments of a-screw dislocations was observed in the temperature range of 70-420K. The spectrum of dislocation related luminescence (DRL) consisted of a doublet of narrow lines red shifted by about 0.3 eV with respect to the band gap. TEM revealed dissociated character of the screw dislocations and the formation of extended nodes at their intersection. From the analysis of the DRL spectral doublet temperature, power and strain dependences DRL was ascribed to direct and indirect excitons bound by 1D quantum wells formed by partials and stacking fault (SF) ribbon of dissociated screw dislocation. Published by AIP Publishing.

AB - Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A strong luminescence of straight segments of a-screw dislocations was observed in the temperature range of 70-420K. The spectrum of dislocation related luminescence (DRL) consisted of a doublet of narrow lines red shifted by about 0.3 eV with respect to the band gap. TEM revealed dissociated character of the screw dislocations and the formation of extended nodes at their intersection. From the analysis of the DRL spectral doublet temperature, power and strain dependences DRL was ascribed to direct and indirect excitons bound by 1D quantum wells formed by partials and stacking fault (SF) ribbon of dissociated screw dislocation. Published by AIP Publishing.

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KW - RECOMBINATION

KW - DEFORMATION

KW - EXCITONS

KW - ENERGY

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